Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn

Pau, J. L.; Scheffler, L.; Hernández, María Jesús; Cervera, M.; Piqueras, J.

doi:10.1016/j.tsf.2010.06.006

Cited by 7 publications

(2 citation statements)

References 9 publications

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“…ZnO-SnO 2 films, which have the advantages of ZnO as well as SnO 2 , have been suggested as a promising material for transparent electronic devices [8,9]. Hitherto, most studies on ZnO-SnO 2 films were focused on highly conductive ZnO-SnO 2 films.…”

Section: Introductionmentioning

confidence: 99%

“…However, the study on highresistive transparent films is also necessary for passive devices such as resistors as well as TTFT, which realizes transparent integrated circuits. Conventionally, ZnO-SnO 2 films have been grown by rf magnetron sputtering and have been reported as being zinc-stannate intermediate compounds composed of Zn 2 SnO 4 and ZnSnO 3 phases [8,9].…”

Section: Introductionmentioning

confidence: 99%

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Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

Cha¹,

Choi²,

Ma³

2012

Journal of Electrical Engineering and Technology

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-ZnO-SnO 2 films were deposited by rf magnetron sputtering using a ZnO-SnO 2 (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO 2 powders calcined at 800°C. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O 2 :Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27°C to 300°C. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO 2 films deposited in O 2 :Ar = 10% exhibited resistivity higher than 10 6 Ωcm and transmittance of more than 80% in the visible range.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

Cha¹,

Choi²,

Ma³

2012

Journal of Electrical Engineering and Technology

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Effects of Growth Temperature and Annealing on Properties of Zn3Sn2O7 Thin Films and Application in TFTs

Chen

Cai

et al. 2013

Journal of Elec Materi

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Formation of ZnO nanowires during short durations of potentiostatic and galvanostatic anodization

Park

Kim

Choi

2013

Current Applied Physics

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Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn

Cited by 7 publications

References 9 publications

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

Effects of Growth Temperature and Annealing on Properties of Zn3Sn2O7 Thin Films and Application in TFTs

Formation of ZnO nanowires during short durations of potentiostatic and galvanostatic anodization

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Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn

Cited by 7 publications

References 9 publications

Highly transparent and resistive nanocrystalline ZnO-SnO2films prepared by rf magnetron sputtering

Highly transparent and resistive nanocrystalline ZnO-SnO2films prepared by rf magnetron sputtering

Effects of Growth Temperature and Annealing on Properties of Zn3Sn2O7 Thin Films and Application in TFTs

Formation of ZnO nanowires during short durations of potentiostatic and galvanostatic anodization

Contact Info

Product

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Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering

Highly transparent and resistive nanocrystalline ZnO-SnO₂films prepared by rf magnetron sputtering