Preparation of ultra-thick β-SiC films using different carbon sources

Tu, Rong; Zheng, Ding; Cheng, Hanlin; Han, Mingxu; Zhang, S.; Goto, Takashi

doi:10.1179/1432891715z.0000000002205

Cited by 9 publications

(8 citation statements)

References 31 publications

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“…8 Similarly, with C 3 H 8 as carbon precursor, the growth at T = 1200 °C, p tot = 4 kPa, was highly ⟨111⟩-oriented but switched to ⟨110⟩ at elevated temperatures. 7,9 No explanation for these changes in preferred growth orientation was suggested in these studies. Highly ⟨111⟩-oriented 3C-SiC has also been prepared with hexamethyldisilane via laser CVD.…”

Section: ■ Introductionmentioning

confidence: 77%

“…On the other hand, at T = 1450 °C, p tot = 1 kPa or at T > 1450 °C, p tot ≤ 10 kPa, highly ⟨110⟩-oriented 3C-SiC was obtained . Similarly, with C 3 H 8 as carbon precursor, the growth at T = 1200 °C, p tot = 4 kPa, was highly ⟨111⟩-oriented but switched to ⟨110⟩ at elevated temperatures. , No explanation for these changes in preferred growth orientation was suggested in these studies. Highly ⟨111⟩-oriented 3C-SiC has also been prepared with hexamethyldisilane via laser CVD. − However, because of the small laser spot size, the coating area was limited to less than 20 × 20 mm 2 .…”

Section: Introductionmentioning

confidence: 77%

“…6 In the SiCl 4based 3C-SiC CVD processes, the preferred growth orientation of resultant coatings varies with the selection of hydrocarbons as well as the deposition conditions. It was reported that by use of CH 4 as the carbon precursor, highly ⟨111⟩-oriented 3C-SiC could be produced either at T = 1200 °C, p tot = 4 kPa 7 or at 1200 < T ≤ 1500 °C, p tot ≥ 40 kPa. 8 On the other hand, at T = 1450 °C, p tot = 1 kPa or at T > 1450 °C, p tot ≤ 10 kPa, highly ⟨110⟩-oriented 3C-SiC was obtained.…”

Section: ■ Introductionmentioning

confidence: 99%

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Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

et al. 2022

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Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl 4 ) and toluene (C 7 H 8 ) at T ≤ 1250 °C and p tot = 10 kPa. In contrast, similar deposition conditions, with methane (CH 4 ) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. No excess carbon was detected in the highly ⟨111⟩-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. The difference in the preferred growth orientation of the 3C-SiC coatings deposited by using C 7 H 8 and CH 4 as the carbon precursors was explained via quantum chemical calculations of binding energies on various crystal planes. The adsorption energy of C 6 H 6 on the SiC (111) plane was 6 times higher than that on the (110) plane. On the other hand, CH 3 exhibited equally strong adsorption on both planes. This suggested that the highly ⟨111⟩-oriented 3C-SiC growth with C 7 H 8 as the carbon precursor, where both C 6 H 6 and CH 3 were considered the main active carbon-containing film forming species, was due to the highly preferred adsorption on the (111) plane, while the lower surface energy of the (110) plane controlled the growth orientation in the CH 4 process, in which only CH 3 contributed to the film deposition.

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Section: ■ Introductionmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 77%

Section: ■ Introductionmentioning

confidence: 99%

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Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

et al. 2022

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“…In the SiCl4-based 3C-SiC CVD processes, the preferred growth orientation of resultant coatings varies with the selection of hydrocarbons as well as the deposition conditions. It was reported that using CH4 as carbon source, highly <111>-oriented 3C-SiC can be produced either at T = 1200 ℃, ptot = 4 kPa 7 or at 1200 < T ≤ 1500 ℃, ptot ≥ 40 kPa 8 . On the other hand, at T= 1450 ℃, ptot = 1 kPa or at T > 1450 ℃, ptot ≤ 10 kPa, highly <110>-oriented 3C-SiC was obtained 8 .…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, at T= 1450 ℃, ptot = 1 kPa or at T > 1450 ℃, ptot ≤ 10 kPa, highly <110>-oriented 3C-SiC was obtained 8 . Similarly, with C3H8 as carbon source, the growth at T = 1200 ℃, ptot = 4 kPa, was highly <111>-oriented, but switches to <110> at elevated temperatures 7,9 . No explanation for these changes in preferred growth orientation was suggested in these studies.…”

Section: Introductionmentioning

confidence: 99%

Controlled CVD growth of highly <111>-oriented 3C-SiC

Huang

Militzer

Wijayawardhana

et al. 2022

Preprint

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Highly <111>-oriented 3C-SiC coatings with distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T ≤ 1250 ℃ and p = 10 kPa. In contrast, similar deposition conditions, using methane (CH4) as carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. No excess carbon was detected in the highly <111>-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. The difference in the preferred growth orientation of the 3C-SiC coatings deposited using C7H8 and CH4 as carbon precursors is explained via quantum chemical calculations of binding energies on various crystal planes. The adsorption energy of C6H6 on the SiC (111) plane was 6 times higher than that on the (110) surface. On the other hand, the CH3 exhibited equally strong adsorption on both planes. This suggests that the highly <111>-oriented 3C-SiC growth in the C7H8 process, where both C6H6 and CH3 are considered the main active carbon-containing film forming species, is due to the highly preferred adsorption on (111) planes, while the lower surface energy of the (110) plane controls the growth orientation in the CH4 process, in which only CH3 contributes to the film deposition.

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Understanding of highly-oriented 3C-SiC ductile-brittle transition mechanism in ELID ultra-precision grinding

Yang,

Liu,

Guo

et al. 2023

Materials Characterization

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Preparation of ultra-thick β-SiC films using different carbon sources

Cited by 9 publications

References 31 publications

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

Controlled CVD growth of highly <111>-oriented 3C-SiC

Understanding of highly-oriented 3C-SiC ductile-brittle transition mechanism in ELID ultra-precision grinding

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Preparation of ultra-thick β-SiC films using different carbon sources

Cited by 9 publications

References 31 publications

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

Controlled CVD growth of highly &lt;111&gt;-oriented 3C-SiC

Understanding of highly-oriented 3C-SiC ductile-brittle transition mechanism in ELID ultra-precision grinding

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Controlled CVD growth of highly <111>-oriented 3C-SiC