2001
DOI: 10.1002/jbm.1212
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Preparation of TiO2 layers on cp‐Ti and Ti6Al4V by thermal and anodic oxidation and by sol‐gel coating techniques and their characterization

Abstract: The excellent biocompatibility of titanium and its alloys used, for example, for medical devices, is associated with the properties of their surface oxide. For a better understanding of the tissue reaction in contact with the oxide layer, knowledge of the chemical and physical properties of this layer is of increasing interest. In this study, titania films were produced on cp-Ti and Ti6Al4V substrates by thermal oxidation, anodic oxidation, and by the sol-gel process. The thickness and structure of the films p… Show more

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Cited by 305 publications
(258 citation statements)
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“…• C. 3,18,19 The amount of anatase is expected to be greater towards the middle of this range. Therefore, the thermally oxidized samples at 300-450…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…• C. 3,18,19 The amount of anatase is expected to be greater towards the middle of this range. Therefore, the thermally oxidized samples at 300-450…”
Section: Methodsmentioning
confidence: 99%
“…It has been shown that both the roughness and thickness of the oxide layer increase with oxidation time. 3,16 Thickness of the surface has also been shown to increase with the temperature to which the sample is exposed.…”
Section: 15mentioning
confidence: 99%
“…Sol-gel dip-coating [5,[13][14][15][16] and anodic oxidation [5,[17][18][19][20][21] are two accessible methods for producing TiO2 coatings because no expensive equipment is required [22]. By controlling the parameters of both techniques, nanofilms with a smooth surface can be obtained.…”
Section: Introductionmentioning
confidence: 99%
“…In order to induce the complete oxidation of the titanium layers into TiO 2 , the samples were annealed at 600 C for 30 min in a conventional furnace under a controlled O 2 flux. 21 The thickness and the composition of the TiO 2 films were investigated by Rutherford Backscattering Spectrometry (RBS), with a 3.5 MeV HVEE Singletron accelerator, using a 2 MeV He þ beam with 165 scattering angle. The samples were then implanted with C þ ions at 20 keV, with a fluence of 1 Â 10 15 cm À2 .…”
Section: Methodsmentioning
confidence: 99%