Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films

Gan, Fengyuan; Shih, I.

doi:10.1109/16.974742

Cited by 73 publications

(45 citation statements)

References 9 publications

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“…CdS, with a bandgap of 2.4 eV ͑in bulk͒, 18 was studied as the semiconductor active layer during the early development of TFTs. 19 Recently, chemically deposited CdS active layers have shown acceptable performance in TFTs with field effect mobility values in the range of 0.5-1.5 cm 2 V −1 s −1 , comparable to those obtained with a TFT based in a-Si:H. [20][21][22][23][24] However, all of these articles included a postdeposition annealing process at temperatures higher than 200°C. The maximum processing temperature for flexible electronics must be lower than 200°C.…”

mentioning

confidence: 88%

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Salas-Villasenor

Mejía

Hovarth

et al. 2010

Electrochem. Solid-State Lett.

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mentioning

confidence: 88%

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Salas-Villasenor

Mejía

Hovarth

et al. 2010

Electrochem. Solid-State Lett.

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“…CdS is an n-type semiconductor with a direct bandgap of 2.42 eV 1 that can be employed in a large variety of optoelectronic devices, such as highly efficient CIGS 2 and CdTe 3 solar cells and photodetectors, as well as gas sensors, 4,5 field effect transistors, 6,7 and LEDs. 8 For most of these applications indium is used to form an Ohmic contact with CdS.…”

Section: Introductionmentioning

confidence: 99%

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

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In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and are polycrystalline, mostly with a (002) texture. The thickness of the films is $600 nm, and the donor density is 1.9 Â 10 16 cm À3. The donor density increases to 1.5 Â 10 17 cm À3 upon annealing. The contact resistivity of sputtered TiN on CdS is found to be 4.7 6 0.6 X cm 2 . This value is sufficiently small to avoid large resistive losses in most CdS device applications. To demonstrate the use of TiN in a CdS device, a Au/CdS/ TiN Schottky diode was constructed. The diode has a potential barrier of 0.69 V and an ideality factor of 2.2.

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“…Several recent papers report high-efficiency solar cells based on CdS/CdTe, CdS/CuInSe 2 and CdS/ Cu(In,Ga)Se 2 [13][14][15][16][17][18][19][20][21][22][23][24][25] heterostructures, employing CdS films as the window layers. In the last few years interest has also developed to use CdS films as semiconductor active layers in thin-film transistors (TFT) [26][27][28][29][30] . The studies on CdS film deposition have been focused on obtaining CdS films with better structural, electrical and optical properties, in order to increase their performance in optoelectronic devices, such as solar cells and TFTs.…”

Section: Introductionmentioning

confidence: 99%

Studies on the properties of cdS films deposited from pH-controlled growth solutions

et al. 2013

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In this work we have studied the properties of CdS films obtained by the chemical bath deposition technique. We studied the influence of pH control of the reaction solution on the structural and optical properties of chemically deposited CdS films. For this, we deposited two sets of CdS films on glass substrates using two different reaction solutions. The main difference between the solutions was that one included the use of a pH-10 NH 4 OH/NH 4 Cl controller solution or buffer, which produces a more uniform pH of the reaction solution during the film-growth process. Using each reaction solution, five CdS films were deposited at 80 °C, varying the deposition time from 15 to 120 minutes. The structural and optical properties of both sets of films were determined by X-ray diffraction and by absorption, transmission and reflection spectroscopy. The differences in the properties of the films were analyzed in terms of pH control.

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Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films

Cited by 73 publications

References 9 publications

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Titanium nitride: A new Ohmic contact material for n-type CdS

Studies on the properties of cdS films deposited from pH-controlled growth solutions

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