“…[11,12] In the past years, elements in the vicinity of Zn and Sb such as In, Pb, Sn, Cd, Bi, Mg, etc. were generally selected to dope the β -Zn 4 Sb 3 , [13][14][15][16][17][18][19][20] but Ge-substitution in β -Zn 4 Sb 3 has been rarely reported so far. Wang et al recently demonstrated the realization of a high thermoelectric figure of merit in Ge-substituted β -Zn 4 Sb 3 , the experimental results and theoretical calculations revealed that Ge substitution had a marked improvement on the Seebeck coefficient and the power factor.…”
This study prepares a group of single crystalline β -Zn 4 Sb 3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn 4.4 Sb 3 Ge x Sn 3 (x = 0-0.15). The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R 3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability. Compared with the polycrystalline Ge-substituted β -Zn 4 Sb 3 , the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10 4 S•m −1 at room temperature for the x = 0.1 sample. The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10 −3 W•m −1 •K −2 at 543 K.
“…[11,12] In the past years, elements in the vicinity of Zn and Sb such as In, Pb, Sn, Cd, Bi, Mg, etc. were generally selected to dope the β -Zn 4 Sb 3 , [13][14][15][16][17][18][19][20] but Ge-substitution in β -Zn 4 Sb 3 has been rarely reported so far. Wang et al recently demonstrated the realization of a high thermoelectric figure of merit in Ge-substituted β -Zn 4 Sb 3 , the experimental results and theoretical calculations revealed that Ge substitution had a marked improvement on the Seebeck coefficient and the power factor.…”
This study prepares a group of single crystalline β -Zn 4 Sb 3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn 4.4 Sb 3 Ge x Sn 3 (x = 0-0.15). The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R 3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability. Compared with the polycrystalline Ge-substituted β -Zn 4 Sb 3 , the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10 4 S•m −1 at room temperature for the x = 0.1 sample. The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10 −3 W•m −1 •K −2 at 543 K.
“…The β-Zn 4 Sb 3 compound, which has recently refined to be Zn 13 Sb 10 , has attracted much attention since the discovery of the high ZT value of 1.3 at 670 K [1]. Many research works have been devoted to optimize the thermoelectric performance by substitution of the constituent elements [2][3][4][5][6][7][8][9][10][11][12][13][14]. Among the many substitution studies, the effect of Cd substitution has been investigated most intensively because the Cd substitution is the most effective to optimize the thermoelectric property.…”
Section: Introductionmentioning
confidence: 99%
“…Kuznetsov and Rowe have reported that details of the structural property of the hot-pressed (Zn 1-x Cd x ) 4 Sb 3 samples [7]. Nakamoto et al have reported the thermoelectric and structural properties of the Cd-substitution system prepared by rapid quenching and gradient freeze methods [8,13].…”
Effect of substitution for Zn by its neighboring elements of Cu, Ag, Au and Ga in the periodic table on the thermoelectric property has been investigated for the Zn 13 Sb 10 compound prepared by a quenching method. A small amount of Ga is successfully substituted for the Zn site with the solubility limit of 10%, and enhances metallic conduction. The improvement of the power factor has been achieved by 25% at 340 K for the 10% Ga-substituted system. n-type conduction is not obtained by the Ga substitution. On the other hand, the substitution of the other elements of Cu, Ag and Au has led to the formation of totally different phases from the 13:10 phase.
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