Preparation of Sputtered (Ba_x,Sr_1−x)TiO₃ Thin Films Directly on Copper

Abstract

Ba 0.6 ,Sr 0.4 )TiO 3 (BST) films were deposited on copper foils by radio frequency magnetron sputtering. By the use of controlled pO 2 high-temperature anneals, the films were completely crystallized in the absence of substrate oxidation. X-ray diffraction and transmission electron microscopy (TEM) revealed an abrupt Cu/BST interface. The deposited BST films exhibit a zero bias permittivity and loss tangent values of 600 and 0.018, respectively. An electrical tunability ratio of 3.5:1 is observed on these metal-insulator-metal devices. Devices show leakage currents of 10 À8 A/cm 2 at 710 V/lm, and loss tangents as low as 0.003 in fields approaching 40 V/lm. J ournal

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