The impetus for new methods in nanomaterials chemistry derives from the need for effective and tunable routes to nanostructures with any desired composition, structure, shape, size, and interfacial properties. Nanowires represent an important class of materials, having the characteristics of one-dimensional quantum confinement when smaller than a critical diameter and the potential to electrically connect the components in an integrated nanoscale system. Several general synthetic strategies for nanowires have been developed, including vapor-phase and solution-phase routes.[1] Many different semiconductor materials have been produced using vaporphase routes by the vapor±liquid±solid (VLS) growth mechanism, [1±3] a process that relies on a metal particle to seed and direct semiconductor wire formation. In solution, a variety of nanowire materials have been synthesized without growth catalysts, however the unidirectional morphology of these nanostructures primarily reflects an internal anisotropic crystal structure.[1] Therefore, researchers (including us) have sought to combine VLS growth with solution-phase chemistry to develop a general route to nanowire synthesis that does not depend on crystal structure. [4,5] The challenge of combining VLS with solution-phase chemistry is the required synthetic temperatures that must exceed the seed metal/semiconductor eutectic temperature. In their pioneering work, Buhro and co-workers demonstrated VLStype nanowire synthesis in conventional solvents (called solution±liquid±solid (SLS)) at synthetic temperatures of around 200 C, using metal/semiconductor combinations such as Ga/ GaAs, [4] In/InN, [6] and, most recently, In/GaAs [7] with low eutectic temperatures. Unfortunately, the eutectic temperatures for most metal/semiconductor combinations are greater than 350 C, including the group IV semiconductors, Si and Ge (with Au). These reaction temperatures can be accessed in solution by pressurizing the solvent above its critical point.Recently, we demonstrated Si and Ge nanowire synthesis in supercritical hexane at temperatures ranging from 350 C to 500 C and pressures ranging from 100 atm to 370 atmÐa process we have called supercritical fluid±liquid±solid (SFLS) nanowire growth. [5,8±10] Hypothetically, this process could be applied to any semiconductor/metal combination with eutectic temperatures less than 600 C Ðthe maximum temperature before degradation of most organic solvents. Here, we demonstrate the first SFLS nanowire synthesis of a compound semiconductor material: GaAs. GaAs nanowires were synthesized in supercritical hexane at 500 C and 37 MPa (370 atm) by reacting (tBu) 3 Ga and As-(SiMe 3 ) 3 in the presence of dodecanethiol-stabilized 7 nm Au nanocrystal seeds. High yields of nanowires (60 %) could be obtained with very little particulate formationÐthe GaAs nanowires shown in Figure 1a were taken directly from the reactor without any purification. They were synthesized with 10 mM precursor solution concentration with a 100:1 precursor/gold molar ratio. These pr...