Preparation of implanted nitrogen targets

Measurement of theErc.m.=259 keV resonance in theNDaigle1, Kelly2, Champagne3 et al. 2016Phys. Rev. C235290View full textAdd to dashboardCite

“…As a result, we have chosen to calculate the standard deviation in the average via a bootstrap method (see e.g., [29]), using the Visual Averaging Library tool [30]. Combining statistical and systematic uncertainties, the relative concentration of 14 N is 0.600 (13), which is in excellent agreement with a previous measurement of 0.61(2) [31]. The corresponding ratio of tantalum to nitrogen is 0.667(21) (note that the uncertainties in the nitrogen and tantalum concentrations are correlated and do not simply add).…”

“…Eq. 1 from Ref [31]) to measure the stoichiometry, which is based on the assumption that the stopping power is nearly constant over the width of the implanted region. Our RBS analyses indicate that the nitrogen concentration, and thus the stopping power, does vary and consequently we have used our current value of Ta/N = 0.667 (21).…”

“…The concentration of nitrogen is (1+Ta/N) −1 and the systematic uncertainty in Ta/N is approximately proportional to the uncertainty in the ratio of stopping powers, ǫ(N)/ǫ(Ta) (see e.g., Eq. 1 of Ref [31]). For energies near E α = 2 MeV, we estimate uncertainties of 2.8% and 1.6%, respectively for ǫ(N) and ǫ(Ta).…”

Lifetime measurement of the 6792 keV state inO15, important for the astrophysicalSfactor extrapolation inSchürmann1, Kunz2, Lingner3 et al. 2008Phys. Rev. C

“…A proton energy of E p = 318 keV, where the thick-target yield plateau is still almost constant, was chosen for all the measurements. The target stoichiometry after the implantation reaches saturation should be equal to that of the compound Ta 2 N 3 [14,15].…”

The ion implantation of helium into gold. A combined X-ray reflection spectroscopy and Rutherford backscattering study

“…The detailed study of implanted helium is made difficult owing t o the relatively small interaction of helium with X-rays or neutrons. [9]. This indirect approach is satisfactory for high dose implants and has been employed for the present work.…”