Preparation of highly c-axis oriented AlN films on Si substrate with ZnO buffer layer by the DC magnetron sputtering

Meng, Xiangqin; Yang, Chengtao; Chen, Qingqing; Yang, Jiabin

doi:10.1016/j.matlet.2012.09.010

Cited by 20 publications

(13 citation statements)

References 13 publications

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“…6 (c) shows the typical I-V characteristics of AlN films (whose thicknesses are all approximately 700 nm) measured at room temperature with the applied voltage from -10 V to 10 V. The leakage current density of AlN-0 at 5 V bias voltage is about M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 12 1×10 -6 A/cm 2 , which is one order of magnitude higher than that of the AlN-1.0 (>1×10 -7 A/cm 2 ) measured under the same condition. The result indicates that the additional magnetic field can improve the insulating property of AlN films, and this must be related to the improvement in the quality of the films in UBMS [1,[30][31][32].…”

Section: Electrical Propertiesmentioning

confidence: 94%

“…The thickness of all the samples for the tests is about 700 nm. It can be seen that the dielectric constant and the dielectric loss are dependent on the coil currents [1], which are related to the quality of the films. As shown in Fig.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Aluminum nitride (AlN), one of the III-V compound semiconductors with the wurtzite crystalline structure, has been considered as one of the most promising materials for high-frequency surface acoustic wave (SAW) devices and heat dissipation layer of high-power electronic devices due to its high ultrasonic velocity, fairly large piezoelectric coupling factor, high thermal conductivity, and high breakdown voltage [1][2][3]. In many applications of AlN films, the performance of the devices is closely related to the preferred orientation, microstructure, morphology, and other properties of the AlN films [1,4,5].…”

Section: Introductionmentioning

confidence: 99%

“…In many applications of AlN films, the performance of the devices is closely related to the preferred orientation, microstructure, morphology, and other properties of the AlN films [1,4,5]. To control and optimize these properties is an important and active subject for the growth of AlN films.…”

Section: Introductionmentioning

confidence: 99%

“…To control and optimize these properties is an important and active subject for the growth of AlN films. AlN films can be prepared by various techniques such as chemical vapor deposition (CVD) [6,7], reactive magnetron sputtering [1,8], molecular beam epitaxy (MBE) [9,10], ion beam-assisted deposition, and metal organic chemical vapor deposition (MOCVD) [11].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

Yuan

et al. 2015

Journal of Alloys and Compounds

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Section: Electrical Propertiesmentioning

confidence: 94%

Section: Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

Yuan

et al. 2015

Journal of Alloys and Compounds

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Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films

et al. 2014

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Study on optimizing c-axis oriented AlN thin film for piezoelectric sensing applications controlling the sputtering process parameters

2021

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The crystal orientation of aluminium nitride (AlN) thin film poses a challenge in piezoelectric applications, where the orientation of ( 002) is desired for obtaining a high piezoelectric coefficient of the order of 10 -12 V/m. Many processes to develop c-axis oriented AlN films with optimized parameters are reported specifically for piezoelectric applications. Of these, the sputtering has been a promising process with control over the target to substrate alignment angle and distance, sputtering parameters, the choice of bottom electrode, etc. The present study uses RF magnetron sputtering to investigate the impact of magnetron source orientation and the influence of working pressure on c-axis oriented AlN crystal growth. AlN thin films were deposited on Al and Mo bottom layers using magnetron sputtering under different source arrangements, namely parallel and confocal. Further, AlN was deposited under different working pressures with all other parameters being fixed. The structural and morphological properties of the prepared samples were studied. The analysis showed a parallel deposition set up with a smooth bottom layer and optimized working pressure promotes AlN to grow in (002) orientation suitable for piezoelectric applications.

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Preparation of highly c-axis oriented AlN films on Si substrate with ZnO buffer layer by the DC magnetron sputtering

Cited by 20 publications

References 13 publications

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films

Study on optimizing c-axis oriented AlN thin film for piezoelectric sensing applications controlling the sputtering process parameters

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