1989
DOI: 10.1016/0040-6090(89)90710-4
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Preparation of graded-index thin films with specific index profile by metal-organic chemical vapour deposition

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Cited by 11 publications
(6 citation statements)
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“…Films of Al 2 O 3 were claimed to be deposited at 693, [2] 673-773, [18][19][20] 673, [21] 623-773, [22] 623-673, [23] below 603, [24] 573, [25] 523-693, [26,27] and 523-673 K. [28] Low-temperature deposition (598-773 K) from ATI was also used for preparing gradedindex aluminum oxide thin films. [29,30] Corrosion resistance studies were performed on films grown at 623 [31] or 693 K. [32] Most of these works were more pragmatic approaches to ameliorate film properties (generally the electrical behavior) than systematic investigations on the correlation between experimental parameters and film composition and properties. Compositional uncertainties are frequently reported for the films prepared at the lowest temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…Films of Al 2 O 3 were claimed to be deposited at 693, [2] 673-773, [18][19][20] 673, [21] 623-773, [22] 623-673, [23] below 603, [24] 573, [25] 523-693, [26,27] and 523-673 K. [28] Low-temperature deposition (598-773 K) from ATI was also used for preparing gradedindex aluminum oxide thin films. [29,30] Corrosion resistance studies were performed on films grown at 623 [31] or 693 K. [32] Most of these works were more pragmatic approaches to ameliorate film properties (generally the electrical behavior) than systematic investigations on the correlation between experimental parameters and film composition and properties. Compositional uncertainties are frequently reported for the films prepared at the lowest temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…Films of Al 2 O 3 were claimed to be deposited at 420°C [2], 400-500°C [28][29][30], 400°C [31], 350-500°C [32], 350-400°C [33], below 330°C [34], 300°C [35], 250-420°C [36], 250-400°C [37]. Low-temperature deposition (325-500°C) from ATI was also used for preparing graded-index aluminium oxide thin films [38,39].…”
Section: Mocvd Of Alumina From Ati: a Reviewmentioning
confidence: 99%
“…Yom et al [51] obtained well crystallized heteroepitaxial films of γ-Al 2 O 3 on Si(100) substrates at 740°C and 3 torr (400 Pa), using a vertical reactor, Ar as a carrier gas and N 2 O as a reactive gas. Dhanavantri and Karekar [38,39] have prepared graded-index thin films by varying the substrate temperature between 300°C (n = 1.562) and 450°C (n = 1.622).…”
Section: Mocvd Of Alumina From Ati: a Reviewmentioning
confidence: 99%
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“…Films of Al 2 O 3 were claimed to be deposited at 693K [2], 673K-773K [3][4][5], 673K [6], 623K-773K [7], 623K-673K [8], below 603K [9], 573K [10], 523K-693K [11,12], 523K-673K [13]. Low-temperature deposition (598K-773K) from ATI was also used for preparing gradedindex aluminium oxide thin films [14,15]. Corrosion resistance studies were performed on films grown at 623 K [16] or 693 K [17].…”
Section: Introductionmentioning
confidence: 99%