Preparation of glow discharge amorphous silicon for passivation layers

Weitzel, I.; Primig, R.; Kempter, K.

doi:10.1016/0040-6090(81)90450-8

Cited by 18 publications

(6 citation statements)

References 19 publications

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“…As argued earlier, for any high-efficiency c-Si solar cell, high-quality surface passivation is of extreme importance. Intrinsic a-Si:H films have been known for a few decades to yield good c-Si surface passivation [30,61,62], and have proved to be on par with the best dielectric films. Most aSi:H(i/ films are deposited by PECVD with silane (SiH 4 ), possibly diluted in H 2 , as a precursor.…”

Section: Substrates and Surface Preparationmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf¹,

Descoeudres²,

Holman³

et al. 2012

Green

108

113

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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Section: Substrates and Surface Preparationmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf¹,

Descoeudres²,

Holman³

et al. 2012

Green

108

113

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“…[9][10][11] Thus, volume change with crystallization is so small that it can be ignored in our experiment. Correspondingly, when crystalline fraction is very small the strain ⑀ is nearly constant and the difference of the strain energy between c-Si and a-Si ⌬E strain is given as follows: …”

Section: Resultsmentioning

confidence: 99%

The model of solid phase crystallization of amorphous silicon under elastic stress

Kimura

Kishi

Katoda

2000

Journal of Applied Physics

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Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation J. Appl. Phys. 111, 053510 (2012) Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe Appl. Phys. Lett. 100, 071908 (2012) Local structure of nitrogen in N-doped amorphous and crystalline GeTe Appl. Phys. Lett. 100, 061910 (2012) Facile creation of bio-inspired superhydrophobic Ce-based metallic glass surfaces Appl. Phys. Lett. 99, 261905 (2011) How does spallation microdamage nucleate in bulk amorphous alloys under shock loading? J. Appl. Phys. 110, 103519 (2011) Additional information on J. Appl. Phys. Solid phase crystallization of an amorphous silicon ͑a-Si͒ film stressed by a Si 3 N 4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si 3 N 4 ͑50 nm͒/Si͑100͒ substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si 3 N 4 cap layer. The Si 3 N 4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si 3 N 4 cap layer. The study suggests that the elastic stress increases with crystallization due to the smaller elastic modulus of a-Si with respect to crystalline silicon ͑c-Si͒. It is most reasonable to think that the elastic stress does not relax and that the elastic energy increased with crystallization because the elastic modulus of a-Si is smaller than that of c-Si. The experimental data was fitted by this model and the difference of the enthalpy ⌬H ac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value.

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“…As a result, Si-H bonds emerge on the surface of single-crystal silicon saturating the interfacial states, lowering defect states and improving key properties of a-Si: H films. [22][23][24][25][26] Kim et al 27 employed 60 MHz very high-frequency plasmaenhanced chemical vapor deposition (VHF-PECVD) to create 6.5 ± 0.5 nm thick a-Si: H layers on n-type c-Si at the substrate temperature of 200 °C, the deposition power of 37 W, and the electrode spacing of 60 mm while maintaining a SiH 4 to H 2 flow ratio of 1:5. The best V OC 647 mV, short-circuit current density 32.28 mA cm −2 , and efficiency of 15.57% were discovered to be attained at the greatest working pressure of 107 pa.…”

Section: Surface Passivation Materialsmentioning

confidence: 99%

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

Shi¹,

Shi²,

Ge³

et al. 2023

ECS J. Solid State Sci. Technol.

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On top of a crystalline silicon wafer, heterojunction solar cells have a thin layer of amorphous silicon (a-Si) placed on them. The efficiency of heterojunction solar cells can be increased by decreasing the electron complex loss by adding an intrinsic passivation layer to a monocrystalline silicon (c-Si) substrate. In this study, we examine the development of the intrinsic passivation layer deposition technique on c-Si substrates over the previous ten years by several research teams. First, a description of the structure, benefits, and passivation of heterojunction solar cells is given. Following that, the impact of modifying process variables on the functionality of the passivation layer and cell efficiency is explored in terms of the passivation material, hydrogen dilution ratio, substrate temperature, and post-deposition annealing. Last but not least, the ideal process parameters are summed up and potential future research areas are predicted. One of the best ways to increase the conversion efficiency of heterojunction solar cells is through surface passivation technology, and future domestic and international research will focus heavily on the process technology of its intrinsic passivation layer.

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Preparation of glow discharge amorphous silicon for passivation layers

Cited by 18 publications

References 19 publications

High-efficiency Silicon Heterojunction Solar Cells: A Review

High-efficiency Silicon Heterojunction Solar Cells: A Review

The model of solid phase crystallization of amorphous silicon under elastic stress

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

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