Preparation of cubic boron nitride film by activated reactive evaporation with a gas activation nozzle

Abstract

Preparation of superhydrophobic nanodiamond and cubic boron nitride films Appl. Phys. Lett. 97, 133110 (2010); 10.1063/1.3494269 Preparation of cubic boron nitride films by radio frequency bias sputtering J. Vac. Sci. Technol. A 13, 2843 (1995); 10.1116/1.579715 Electron optical characterization of cubic boron nitride thin films prepared by reactive ion platingThe preparation of a cubic boron nitride film by physical vapor deposition processes has been investigated. The electron beam guns of a hollow cathode discharge type and a conventional highvoltage type were used for the boron evaporation source. The stoichiometric boron nitride film could be obtained by using a gas activation nozzle. It was necessary to apply the rfbias potential to the substrate to accelerate the formation of the cubic BN phase. It was found that mixing argon gas to the reactant gas N z assists the formation of cubic phase. The film structure was characterized by the infrared absorption spectrum and transmission electron diffraction observation. The microhardness of the cubic boron nitride film obtained was estimated to be about 4000 kg/mm2.

Molecular dynamics study of deposition mechanism of cubic boron nitride

“…4), they have four-fold coordinated tetrahedral structure typical of sp 3 -bonded structure, and hence their formation contributes directly to the increase in the sp 3 content of the target. Moreover, more than half of the four-fold coordinated defects have the BN 4 and NB 4 con®gurations, which are the constituents of cBN. In the case of E p 50 eV and T s 700 K, for example, 66±74% of the four-fold coordinated defects have the BN 4 and NB 4 con®gurations.…”

“…Moreover, more than half of the four-fold coordinated defects have the BN 4 and NB 4 con®gurations, which are the constituents of cBN. In the case of E p 50 eV and T s 700 K, for example, 66±74% of the four-fold coordinated defects have the BN 4 and NB 4 con®gurations. These facts imply that the bombardmentinduced defects play important roles in cBN nucleation.…”

“…Secondly, the successful synthesis of cBN thin ®lms by ion/plasma-assisted methods is one of the examples that best demonstrate the ability of these energetic techniques to achieve the growth of materials that conventional nonenergetic methods have failed to synthesize. It is usually accepted that, in vapor-phase deposition of boron nitride, some form of ion bombardment during growth is necessary to obtain cBN-containing ®lms [4], and that without ion bombardment, only graphitic boron nitride (gBN), an sp 2 -bonded form of BN, is grown. Lastly, the subject is also interesting from a scienti®c viewpoint, since it is the intersection of two ®elds, namely the study of ion±solid interactions and the theory of crystal growth.…”

Synthesis and characterization of cubic boron nitride thin films using the ME-ARE method

“…7. The dark field images consisted of spLbonded BN, as was previously reported [6,7,17]. The upper layer appeared different from the initial layer in microstructure, the SADP being typical of the cubic phase of BN.…”

“…CBN films have been synthesized by various deposition techniques such as plasma-assisted chemical vapor deposition (PACVD) [3,4], ion plating [5,6,7], sputtering 118,9] and ion beam-assisted deposition [ 10, ll, 12]. Ion bombardment on the growing film is found to be the only way to produce boron nitride films with high cubic phase content.…”