Preparation of Cu<sub>2</sub>SnS<sub>3</sub>Thin Films by Sulfurization of Cu/Sn Stacked Precursors

Chino, Kotaro; Koike, Junpei; Eguchi, Shinya; Araki, Hideki; Nakamura, Ryota; Jimbo, Kazuo; Katagiri, Hironori

doi:10.7567/jjap.51.10nc35

Cited by 77 publications

(39 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A variety of crystal structures have been reported for Cu 2 SnS 3 thin films, including cubic, tetragonal, monoclinic, and triclinic [5,10,11]. First principles calculations for this compound suggest that the different crystal structures result from Cu/Sn disorder on the cation sites of the zinc blende-based lattice.…”

Section: Introductionmentioning

confidence: 99%

Effects of Disorder on Carrier Transport inCu2SnS3

et al. 2015

View full text Add to dashboard Cite

In recent years, further improvements in the efficiency of Cu2ZnSn(S,Se)4 photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu2SnS3 is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu2SnS3 displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu2SnS3 thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu2SnS3. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu2SnS3 displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu2SnS3-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.

show abstract

Section: Introductionmentioning

confidence: 99%

Effects of Disorder on Carrier Transport inCu2SnS3

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Thin CTS films have been made using several techniques, spin coating [21][22][23][24], pulsed laser deposition from Cu 2 SnS 3 mulitcomponent targets [25]; doctor blade method [26] nano ink [27]; spray pyrolysis [28,30]; direct liquid coating [31,32]; sulfurizing Cu/Sn stacked precursors deposited on glass substrates by electron beam & H. Dahman h_dahman_2000@yahoo.com evaporation [33], sulfurizing, (Cu, Sn)S structured precursors prepared by successive ionic layer absorption and reaction (SILAR) [34,35]; annealing in sulphur atmosphere electrodeposited metals [18,36]; heat treatment of electrodeposited SnS-Cu layers [37], sulfurization of DC magnetron sputtered Sn-Cu stacks [38][39][40][41], direct evaporation of a synthesized Cu 2 SnS 3 powder [42], three steps method based on sulfurization of evaporated copper on sprayed SnS 2 film [43], sulfurization of a stack of vacuum-evaporated Cu and Sn films [44][45][46] route earlier used by Rezig and Dahman to prepare thin films of iron pyrite [47,48]. In this study, pure cubic structure Cu 2 SnS 3 films were grown by simple one-step spin coating technique from a single precursor's solution of Cu-Sn-thiourea complex.…”

Section: Introductionmentioning

confidence: 99%

Cu2SnS3 thin films deposited by spin coating route: a promise candidate for low cost, safe and flexible solar cells

Dahman

Mır

2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Thin films of Cu 2 SnS 3 (CTS) was successfully grown on glass substrates by sol-gel spin coating technique. In this work, the effect of drying time on structural, morphological and optical characteristics is investigated while drying temperature was kept at 300°C. The samples were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Vis-NIR spectroscopy and four probe analysis. The XRD patterns of the samples proved the polycrystalline nature and the formation of pure cubic Cu 2 SnS 3 structure with (111) preferential orientation. No peak referring to other binary or ternary phases were detected in the patterns. The average crystallite sizes calculated using the DebyeScherrer formula was about 7.5 nm. The AFM and SEM images revealed that the CTS films have continuous and dense morphology. The films roughness increases from 8 to 68 nm with increasing drying time from 2 to 10 min. The thin films absorption coefficients were in the range 0.66 9 10 5 -1.38 9 10 5 cm -1 at 2.14 eV. We found that by increasing the drying time, the sheet resistance increased from 22 to 574 kX and the direct optical band gap increased from 1.19 to 1.65 eV. The synthesised material seems to be a good candidate for flexible, cheap and friendly environment solar cells applications.

show abstract

“…Of these, Cu 2 SnS 3 (CTS) with a reported band gap of *0.90-1.35 eV, high optical absorption coefficient ðaÞ [ 10 4 cm À1 , p-type electrical conductivity [5][6][7][8] is an attractive option. CTS solar cells and the cells based on CTS alloyed with Ge have been reported with an efficiency of 2-3 and 6 % respectively [9][10][11][12][13]. But these efficiencies are quite low.…”

Section: Introductionmentioning

confidence: 99%

“…The reported work on growth and characterization of CTS thin films is quite meagre. CTS films have been grown by thermal evaporation of CTS ingot [5] and by sulfurization of metallic precursors/ Cu-Sn alloy precursors deposited by different techniques like sputtering [7], electron beam evaporation [10,11,14], thermal evaporation [15,16], DC sputtering [7] co-sputtering [13], RF Sputtering [17] and electrodeposition [8,9,18]. Approaches like annealing of thermally evaporated Cu film on spray-deposited SnS 2 [19], electrodeposited SnS on Cu in sulfur atmosphere [20], binary sulfide layers deposited by chemical bath deposition [8] have also been used to grow CTS thin films.…”

Section: Introductionmentioning

confidence: 99%

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

Jayasree

Chalapathi

Raja

2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Copper tin sulfide (Cu 2 SnS 3 ) thin films were grown by a two-stage process of sequential deposition of precursor layers CuS and SnS by chemical bath deposition technique followed by annealing in sulfur atmosphere. Two stacks of SnS-CuS thin films were prepared in which SnS thickness alone was varied keeping CuS film thickness fixed in an attempt to optimize SnS layer thickness to obtain Cu 2 SnS 3 (CTS). The annealed films were characterized by studying their structural, microstructural and optical properties. X-ray diffraction analysis of the films obtained by annealing stack S-I revealed that they are multi-phase containing Cu 2 SnS 3 and the secondary phases, Sn 2 Sn 3 and Snrich CTS phase Cu 2 Sn 3 S 7 . Films obtained on annealing stack S-II resulted in monoclinic CTS phase with minor Cu 2 Sn 3 S 7 , tetragonal/cubic CTS phases. The direct optical band gap of monoclinic CTS phase is found to be 0.82 eV.

show abstract

Preparation of Cu₂SnS₃Thin Films by Sulfurization of Cu/Sn Stacked Precursors

Cited by 77 publications

References 17 publications

Effects of Disorder on Carrier Transport inCu2SnS3

Effects of Disorder on Carrier Transport inCu2SnS3

Cu2SnS3 thin films deposited by spin coating route: a promise candidate for low cost, safe and flexible solar cells

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

Contact Info

Product

Resources

About

Preparation of Cu2SnS3Thin Films by Sulfurization of Cu/Sn Stacked Precursors

Cited by 77 publications

References 17 publications

Effects of Disorder on Carrier Transport inCu2SnS3

Effects of Disorder on Carrier Transport inCu2SnS3

Cu2SnS3 thin films deposited by spin coating route: a promise candidate for low cost, safe and flexible solar cells

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

Contact Info

Product

Resources

About

Preparation of Cu₂SnS₃Thin Films by Sulfurization of Cu/Sn Stacked Precursors