Preparation of Al2O3 film by sol–gel method on thermally evaporated Al film

Yang, Pengfei; Yao, Manwen; Xiao, Ruihua; Chen, Jianwen; Yao, Xi

doi:10.1016/j.vacuum.2014.04.008

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…Due to this polymorphism, the properties of the Al 2 O 3 thin films are strongly influenced by the deposition technique, which determine the formation of a particular phase or phase mixtures [6,7]. In recent years, there has been a considerable amount of work pertaining to deposit Al 2 O 3 thin films by different methods, a typical list will involve, for instance, chemical vapor deposition [8], sol-gel method [9], filtered cathodic vacuum arc deposition [10], atomic layer deposition [11], E-beam evaporation [12], plasma spray [13], pulsed laser deposition [14] and sputter deposition [15][16][17][18]. Among these methods, sputter deposition and, more specifically, reactive high power impulse magnetron sputtering (R-HiPIMS) technique has been identified as superior to other techniques in terms of film density, phase tailoring and adhesion strength with substrate [15,19].…”

Section: Introductionmentioning

confidence: 99%

Effect of bias voltage on microstructure and optical properties of Al2O3 thin films prepared by twin targets reactive high power impulse magnetron sputtering

Zhou

Wang

et al. 2019

Vacuum

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Section: Introductionmentioning

confidence: 99%

Effect of bias voltage on microstructure and optical properties of Al2O3 thin films prepared by twin targets reactive high power impulse magnetron sputtering

Zhou

Wang

et al. 2019

Vacuum

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“…If sol-gel alumina layers were a part of a multilayer system, then the number of defects in the alumina layer and thus the dielectric strength were sensible to the thermal expansion mismatch of the sub-layers and the thermal treatments during preparation (Yang et al 2014).…”

Section: Dielectric Filmsmentioning

confidence: 99%

Alumina Thin Films

Nofz¹

2016

Handbook of Sol-Gel Science and Technology

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This chapter gives an overview over preparation, properties, and applications of alumina thin films. The preparation of polymeric and colloidal alumina sols and their deposition on diverse substrate materials with different geometries are described first. Consideration of properties (surface tension, particle size, viscosity, aging of the sols, and their optimization by using certain additives) is included, too. A description of posttreatments of the coatings, which initiate phase transformations and also determine their microstructure, completes the part on coating preparation. Data on adhesion, thickness, surface roughness, and mechanical, textural as well as optical properties of alumina thin films are provided in a further paragraph. In a third main part, experience concerning possible applications, such as (i) membranes for catalysis, separation, and filtration, (ii) barrier layers against electrochemical and high-temperature corrosion or interdiffusion of ions between different phases, (iii) mechanical protection, (iv) sensor construction, (v) improvement of optical properties, as well as (vi) achieving water repellency, is summarized.

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“…As a dielectric metal oxide, Al 2 O 3 exhibits a high transparency, large bandgap and excellent electrical insulation properties, hence it is widely applied in electronic devices and electrochemistry, e.g., as a protection layer [1,2,3,4,5,6]. Commonly used methods for making Al 2 O 3 films include sol-gel, sputtering, evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD) and atomic layer deposition (ALD) [7,8,9,10,11]. CVD is a widely used thin film deposition technique to provide good quality thin films with control over the chemical composition.…”

Section: Introductionmentioning

confidence: 99%

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

et al. 2019

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An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of Al2O3 via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited Al2O3 films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting.

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Preparation of Al2O3 film by sol–gel method on thermally evaporated Al film

Cited by 5 publications

References 19 publications

Effect of bias voltage on microstructure and optical properties of Al2O3 thin films prepared by twin targets reactive high power impulse magnetron sputtering

Effect of bias voltage on microstructure and optical properties of Al2O3 thin films prepared by twin targets reactive high power impulse magnetron sputtering

Alumina Thin Films

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

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