1985
DOI: 10.1016/0378-4363(85)90459-0
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Preparation of AgMo6S8 thin films by reactive sputtering

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Cited by 12 publications
(5 citation statements)
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“…By use of this technique polycrystalline AgMo6S8 films with thicknesses ranging from 0.5 to 1 ixm were obtained. We should also mention that films of AgMo6S8 as thin as 1000A, whose electrochemical behavior will be reported elsewhere, were recently prepared by a novel reactive sputtering technique (13).…”
Section: Methodsmentioning
confidence: 99%
“…By use of this technique polycrystalline AgMo6S8 films with thicknesses ranging from 0.5 to 1 ixm were obtained. We should also mention that films of AgMo6S8 as thin as 1000A, whose electrochemical behavior will be reported elsewhere, were recently prepared by a novel reactive sputtering technique (13).…”
Section: Methodsmentioning
confidence: 99%
“…no signs of concomitant HIV infection or genetic causes of severe immunodeficiency), the immune systems of neonates and infants are immature with suboptimal responses to infections and vaccines [43,44]. Viral adrenalitis in primary immunodeficiencies have also been described, including adrenal insufficiency caused by Epstein-Barr virus (EBV) infection in an adolescent with Wiscott-Aldrich syndrome and subclinical adrenal CMV infection discovered at autopsy in children with severe combined immunodeficiency [45,46]. However, some of the viruses described above, including HSV-1 and CMV, have also been associated with adrenalitis in apparently immunocompetent adults [29,47,48].…”
Section: Microbial Causes Of Adrenal Insufficiencymentioning
confidence: 99%
“…The constituting elements were deposited epitactically, monolayer after monolayer and converted into the desired semiconductor 243, 244. The synthetic relevance finally stepped into the foreground in the context of the creation of thin films of superconducting chevrel phases from the elements 245, 246. To achieve this result, UHV‐chambers were constructed, in which the constituent metals were evaporated, either in a H 2 S atmosphere or together with elementary sulfur, and made to react on a heated substrate (∼800 °C).…”
Section: High Mobility Short Transport Distances: Reactions In Thmentioning
confidence: 99%