Preparation in vapour state of fluoride glass components by a chemical vapour deposition process

Jardin, M.; Guery, J.; Jacoboni, C.

doi:10.1016/0022-3093(95)00006-2

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…[37][38][39][40][41] Only a few CVD methods have been used for depositing LaF 3 thin films, i.e., pyrolysis of a single source precursor La(hfa) 3 diglyme complex (hfa ¼ hexafluoroacetylacetonate), [42] or by using HF or NF 3 as a fluorinating agent. [43] Atomic layer deposition (ALD), a special variant of the CVD method, is based on the film growth through alternate saturative surface reactions. ALD has many good benefits compared to the others, e.g., accurate thickness control, excellent step coverage, and uniformity as well as high reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Pilvi

Puukilainen

Arstila

et al. 2008

Chemical Vapor Deposition

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Lanthanum fluoride is a vacuum ultraviolet (VUV) transparent material which is widely used in optical applications. An atomic layer deposition (ALD) process is developed for depositing lanthanum fluoride thin films for the first time. LaF 3 films are grown at 225-350 -C using La(thd) 3 and TiF 4 as precursors. The crystallinity, morphology, composition, thicknesses, and refractive indices of the films are analyzed by X-ray diffraction/reflection (XRD/XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometry. Electrical properties, such as permittivity and leakage current density, are also studied. An exceptionally high growth rate of about 5 Å per cycle is achieved at 225-250 -C. The films are polycrystalline, the refractive indices vary between 1.57 and 1.61, and the permittivity is 12.3. The impurities detected in the LaF 3 film are Ti, C, O, and H. The level of all of these tends to decrease with increase in the deposition temperature, and is only 3.5 at.-% at 350 -C.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Pilvi

Puukilainen

Arstila

et al. 2008

Chemical Vapor Deposition

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“…Vapor‐phase processes appear attractive due to the success of chemical vapor deposition (CVD) in purifying silica for fiber technology. Although some studies have obtained encouraging results, the preparation of bulk quantities of fluoride glasses by CVD is difficult because of the high evaporation temperature of many binary fluorides. Therefore, a comprehensive purification strategy must target the chemistry before the formation of the metal fluoride.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of High‐Purity Metal Fluorides for Photonic Applications

Patterson

Stark

Yoshida

et al. 2011

Journal of the American Ceramic Society

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We combine chelate-assisted solvent extraction (CASE) and hot hydrogen fluoride gas treatment to enable a general method for the preparation of high-purity binary metal fluorides. The fluorozirconate glass ZBLANI:Yb 3+ (ZrF 4 -BaF 2 -LaF 3 -AlF 3 -NaF-InF 3 -YbF 3 ), a solid-state laser-cooling material, is used as a test case to quantitatively assess the effectiveness of the purification method. The reduction of transition-metal and oxygen-based impurities is quantified directly by inductively coupled plasma mass spectrometry (ICP-MS) and indirectly by laser-induced cooling, respectively. The concentrations of Cu, Fe, Co, Ni, V, Cr, Mn, and Zn impurities in the ZrCl 2 O precursor solution were measured individually by ICP-MS at various stages of the purification process. CASE was found to reduce the total transition-metal concentration from 72500 tõ 100 ppb. Laser cooling was most efficient in ZBLANI:Yb 3+ glass fabricated from CASE-purified metal fluoride precursors, confirming the results of the ICP-MS analysis and demonstrating the effectiveness of the purification methods in a finished optical material. High-purity metal fluorides prepared by the methods presented herein will enable new high-performance optical materials for solid-state optical refrigerators, crystals for vacuum ultraviolet (VUV) spectroscopy of the Thorium-229 nucleus, VUV optics, fibers, and thin-film coatings.

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Rare-earth beta-diketonates

Binnemans

2005

Handbook on the Physics and Chemistry of Rare Earths

397

303

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Contents 157 5.6. Solution structure 157 5.7. Electrochemical properties 158 5.8. Thermodynamic properties 159 5.9. Magnetic properties 159 5.10. Crystal-field splittings 160 5.11. Infrared spectra 161 5.12. Chirality sensing 161 5.13. Properties of hemicyanine dyes with βdiketonate counter ions 162 6. Luminescence of β-diketonate complexes 162 6.1. Photoluminescence 162 6.2. Electroluminescence 178 6.3. Triboluminescence 179 6.4. Sensitized chemiluminescence 183 7. From complexes to materials 185 7.1. Sol-gel glasses 185 7.2. Ormosils 186 7.3. β-Diketonates in polymer matrices 190 7.4. β-Diketonates in zeolites 195 7.5. Langmuir-Blodgett films (LB films) 197 7.6. Liquid crystals 200 7.7. Nonlinear optical materials 203 8. From materials to devices 205 8.1. Chelates for lasers 205 8.2. Organic light-emitting diodes (OLEDs) 206 8.3. Liquid crystal displays (LCDs) 216 8.4. Polymeric optical waveguides and amplifiers 217 9. NMR shift reagents 218 9.1. Historical development and general principles 218 9.2. Achiral shift reagents 221 9.3. Chiral shift reagents 226 10. Analytical applications 227 10.1. Trace analysis of lanthanide ions 227 10.2. Trace analysis of organic and biomolecular compounds 229 10.3. Luminescent visualization of latent fingerprints 230 10.4. Chemical sensors 232 10.5. Stationary phases in gas chromatography 232 11. Applications of volatile complexes 233 11.1. Volatile β-diketonate complexes 233 11.2. Gas chromatographic separation of the rare earths 237 11.3. Preparation of thin films by metalorganic chemical vapor deposition (MOCVD) 238 11.4. Preparation of thin films by atomic layer deposition (ALD) 241 11.5. Fuel additives 242 12. Solvent extraction 243 13. Catalytic properties 247

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Preparation in vapour state of fluoride glass components by a chemical vapour deposition process

Cited by 5 publications

References 10 publications

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Preparation and Characterization of High‐Purity Metal Fluorides for Photonic Applications

Rare-earth beta-diketonates

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Preparation in vapour state of fluoride glass components by a chemical vapour deposition process

Cited by 5 publications

References 10 publications

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

Preparation and Characterization of High‐Purity Metal Fluorides for Photonic Applications

Rare-earth beta-diketonates

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Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors