Preparation conditions of chromium doped ZnSe and their infrared luminescence properties

Bürger, A.; Chattopadhyay, K.; Ndap, J.-O.; Ma, Xiaoyan; Morgan, S. H.; Rablau, Corneliu; Su, Ching‐Hua; Feth, S.; Page, Ralph H.; Schaffers, Kathleen I.; Payne, Stephen A.

doi:10.1016/s0022-0248(01)00845-4

Cited by 57 publications

(38 citation statements)

References 14 publications

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“…Therefore, Cr doped II-VI semiconductors, being effective gain materials for broadly tunable mid-IR lasers, are also very promising for passive Q-switching of the cavities of rareearth (e.g., Er 3+ , Tm 3+ , Ho 3+ ) lasers. The concentration quenching of luminescence of Cr:ZnSe crystals was studied in detail in [9,10]. The authors showed that concentration quenching could be neglected at RT at concentrations below 10 19 cm 3 .…”

Section: Spectroscopic Properties Of Thementioning

confidence: 99%

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Mirov

Fedorov

Moskalev

et al. 2010

Laser & Photonics Reviews

205

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Recent progress in chromium and iron doped II-VI semiconductor materials makes them the laser sources of choice when one needs a compact system with tunability over 1.9-5.1 μm. Output powers exceeding 10 W and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable laser systems. This article reviews transition metal doped II-VI materials and recent progress in Cr-and Fe-doped solid-state mid-IR lasers.Critical areas driving future progress in Cr-and Fe-doped chalcogenide middle infrared lasers: fabrication of binary and ternary II-VI ceramic gain media with low phonon cut-off, low optical losses and high design flexibility; high performance laser design with improved characteristics in power (power scaling to dozens of Watts), spectral (spectral coverage over 1.8-6 μm), temporal (frequency comb generation), and pump domains (electrically pumped Cr-and Fe-doped II-VI quantum confined structures).

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Section: Spectroscopic Properties Of Thementioning

confidence: 99%

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Mirov

Fedorov

Moskalev

et al. 2010

Laser & Photonics Reviews

205

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“…The strong absorption observed near the bandgap is associated with an acceptor-type charge-transfer process. 16 Low-power Cr:ZnSe laser studies conducted by Coherent Technologies, Inc. (CTI, Lafayette, CO) have produced essentially indistinguishable results using both single-crystal and polycrystalline host material. Consequently, polycrystalline material is routinely used in laser construction.…”

Section: Materials Propertiesmentioning

confidence: 99%

“…2 Measurements at Fisk University indicate that Cr 2ϩ :ZnSe room-temperature fluorescence lifetimes remain constant for low-Cr concentrations up to approximately 10 19 Cr ions/cm 3 . 16 At higher doping levels, concentration quenching effects occur such that the fluorescence lifetime is reduced by a factor of 2 at doping concentrations of approximately 5 ϫ 10 19 cm Ϫ3 . This is shown in Fig.…”

Section: Materials Propertiesmentioning

confidence: 99%

Transition-metal-doped chalcogenide lasers

Carrig

2002

Journal of Elec Materi

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INTRODUCTIONBroadly tunable near-and mid-infrared lasers are of interest for a variety of scientific, remote-sensing, and military applications. Uses include high-resolution optical spectroscopy; metrology; pumping of nonlinear optical-frequency converters, such as optical parametric oscillators (OPOs); standoff chemical sensing; optical communications through poor visibility conditions; multispectral detection and imaging; and infrared countermeasures. Tunable laser sources in the 2-3-m region include Cr 2ϩ -doped chalcogenide lasers; cryogenic materials, such as color-center lasers; limited tunability systems, such as Tm lasers, gas or chemical lasers, and semiconductor lasers; and nonlinear optical devices, such as OPOs. 1 Coherent radiation sources in the 3-4-m band include the previously named sources, leadsalt diode lasers, and nonlinear frequency mixers.Transition-metal-doped chalcogenide lasers are of high interest because of their versatility, broad room-temperature wavelength tunability, demonstrated high optical efficiencies, potential to be scaled to high powers via direct-diode pumping, and relative novelty. To date, continuous-wave (CW), gain-switched, and mode-locked laser operation has been demonstrated. Material advantages can include broad absorption and emission bands, highfluorescence quantum efficiencies at room temperature, moderate-gain cross sections, and minimal susceptibility to loss mechanisms, such as excitedstate absorption or up conversion. Additionally, the materials can be produced by a variety of methods, including several direct-growth techniques and diffusion doping. The principal material disadvantages include a high dn/dT (the change in refractive index with temperature) and, for some applications, a short energy-storage time. The high dn/dT is an issue because it can lead to strong thermal lensing, which complicates high-power laser designs.In this paper, I briefly review fundamental chalcogenide-laser material properties, the current state-of-the-art of CW and pulsed Cr 2ϩ -and Fe 2ϩ -doped chalcogenide lasers, and selected recent research results. A short discussion is also provided for laser-active Cr 2ϩ -doped ternary-compound II-VI semiconductors. Because many subject areas are only briefly summarized, I have attempted to provide liberal references for the interested reader. MATERIAL PROPERTIESThe seminal work in this field is the paper by DeLoach and colleagues at Lawrence Livermore National Laboratory (Livermore, CA), 2 which provides a thorough discussion of the spectroscopic features of Cr 2ϩ , Fe 2ϩ , Co 2ϩ , and Ni 2ϩ ions in several zinc-chalcogenide hosts. It is worth noting that the luminescent properties of transition-metal-doped chalcogenides had been described several decades earlier by a number of researchers; 3-7 however, the Livermore work was pivotal because it focused on the laser critical features of these materials and described the first reported laser action from this class of materials.Broadly tunable mid-infrared lasers are desirable for a number o...

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“…The optical properties of transition-metal-doped chalcogenide semiconductors have attracted significant attention for applications in tunable mid-infrared (MIR) lasers [1][2][3][4][5][6][7][8][9][10]. Room-temperature lasing in the 2-3 mm range has been reported from several Cr 2+ -doped II-VI's including Cr:ZnS [1,2], Cr:ZnSe [1][2][3], Cr:Cd 0.85 Mn 0.15 Te [4], Cr:Cd 0.55 Mn 0.45 Te [5], Cr:CdTe [6], and Cr:CdSe [7].…”

Section: Introductionmentioning

confidence: 99%

“…Ongoing research efforts on Cr 2+ laser crystals focus on: (i) optimizing the material preparation in terms of Cr doping and passive absorption losses, (ii) overcoming the relatively poor thermal properties of II-VI hosts through new laser designs, and (iii) tuning the optical properties of Cr 2+ ions through changes in the host composition [6,9]. Cr doping of II-VI materials has been achieved through either in situ doping during growth or through a post-growth thermal diffusion process [1][2][3][4][5][6][7][8][9][10]. In this paper, results on the incorporation of Cr 2+ ions in polycrystalline windows of ZnSe and CdTe through thermal diffusion are reported.…”

Section: Introductionmentioning

confidence: 99%