Preparation and thermoelectric properties of BP films on SOI and sapphire substrates

Kumashiro, Y.; Nakamura, K.; Enomoto, T.; Tanaka, Masayuki

doi:10.1007/s10854-010-0245-1

Cited by 14 publications

(9 citation statements)

References 29 publications

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“…For effective and efficient neutron detection, BP must also have high crystalline quality with optimum electrical properties. Although BP epitaxy on substrates such as silicon, ,− sapphire, , SiC, ,− and GaN/sapphire has been studied for more than 45 years, with few exceptions, most previous studies produced BP with poor electrical properties due to the unintentional impurities and structural defects introduced in the films during epitaxy. The primary reasons for generation of these impurities and defects are poor chemical stability of the substrate, large mismatches of lattice constants and thermal expansion coefficients between the substrate and BP, and growth conditions employed during epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala

Frye

Wang

et al. 2015

Crystal Growth & Design

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The boron phosphide (BP) semiconductor has many remarkable features, including high thermal neutron capture cross section of the 10 B isotope, making it attractive for neutron detection applications. Effective and efficient neutron detection require BP to also have high crystal quality with optimum electrical properties. Here, we present the heteroepitaxial growth of high quality BP films on a superior aluminum nitride(0001)/sapphire substrate by chemical vapor deposition. The effect of process variables on crystalline and morphological properties of BP was examined in detail. BP deposited at high temperatures and high reactant flow rate ratios produced films with increased grain size and improved crystalline orientation. Narrower full width at half-maximum values of BP Raman peaks (6.1 cm −1 ) and ω rocking curves (352 arcsec) compared to values in the literature confirm the high crystalline quality of produced films. The films were n-type with the highest electron mobility of 37.8 cm 2 /V·s and lowest carrier concentration of 3.15 × 10 18 cm −3 . Rotational twinning in BP due to degenerate epitaxy caused by 3-fold BP(111) on 6-fold AlN(0001) was confirmed by synchrotron white beam X-ray topography. This preliminary study showed that AlN is an excellent substrate for growing high quality BP epitaxial films with promising potential for further enhancement of BP properties.

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Section: Introductionmentioning

confidence: 99%

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala

Frye

Wang

et al. 2015

Crystal Growth & Design

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“…We now turn to an experimental demonstration of the potential of BP as a Mie-resonant nanostructure. BP has been synthesized in various forms such as crystals, 43,44 films, 35,45,46 and nanoparticles. [47][48][49] However, BP nanoparticles in the size range suitable for sustaining Mie resonances have not been reported.…”

Section: Far-and Near-field Characterization Of Bp Nanoparticlesmentioning

confidence: 99%

Ultraviolet Mie resonances in computationally discovered boron phosphide nanoparticles

Svendsen,

Sugimoto,

Assadillayev

et al. 2021

Preprint

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Controlling ultraviolet light at the nanoscale using optical Mie resonances holds great promise for a diverse set of applications, such as lithography, sterilization, and biospectroscopy. However, Mie resonances hosted by dielectric nanoantennas are difficult to realize at ultraviolet wavelengths due to the lack of both suitable materials and fabrication methods. Here, we systematically search for improved materials by computing the frequency dependent optical permittivity of 338 binary semiconductors and insulators from first principles, and evaluate their potential performance as high refractive index materials using Mie theory. Our analysis reveals several interesting candidate materials among which boron phosphide (BP) appears particularly promising. We then prepare BP nanoparticles and demonstrate that they support Mie resonances at visible and ultraviolet wavelengths using both far-field optical measurements and near-field electron energy-loss spectroscopy. We also present a laser reshaping method to realize spherical Mie-resonant BP nanoparticles. With a refractive index above 3 and low absorption losses, BP nanostructures advance Mie optics to the ultraviolet.

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“…Another family of thermoelectric materials made by CVD includes silicon and silicon compound materials, including silicon nanowires [14,15], SiC [16,17], and silicon-based compounds [18][19][20][21]. Still another category is the pure boron or boron related compounds [22][23][24][25][26][27][28][29][30]. CVD was reported for preparing oxide thermoelectric materials [31], Ge nanocones [32], and some less common compounds such as Se-C films [33].…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Bi-Te-Ni-Fe on Magnesium Oxide Substrate and Its Seebeck Effect

et al. 2017

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Abstract:In this work, a Bi-Te-Ni-Fe complex coating material was obtained on magnesium oxide substrate by a single step ambient pressure chemical vapor deposition (CVD). Nickel acetate, bismuth acetate, iron (III) nitrate, and tellurium (IV) chloride dissolved in N,N-dimethylformamide (DMF) served as the metal sources for Ni, Bi, Fe, and Te, respectively. Hydrogen was used as the carrier gas. The substrate was kept at 500 • C in a quartz tube reaction chamber. The chemical vapor deposition time was two hours. Scanning electron microscopic observation revealed porous morphology of the deposited material with a needle-like submicron fine structure. These needle-like entities form networks with fairly uniform distribution on the substrate. Thermoelectric property test showed that the coating is p-type with a Seebeck coefficient of 179 µV/K. Time-dependent potential data were obtained to show the sensitivity of the Seebeck effect to temperature changes.

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Preparation and thermoelectric properties of BP films on SOI and sapphire substrates

Cited by 14 publications

References 29 publications

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Ultraviolet Mie resonances in computationally discovered boron phosphide nanoparticles

Chemical Vapor Deposition of Bi-Te-Ni-Fe on Magnesium Oxide Substrate and Its Seebeck Effect

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