Preparation and structure of annealed CuInSe2 electrodeposited films

Tzvetkova, E.; Stratieva, N.; Ganchev, M.; Tomov, I. V.; Kochev, K.

doi:10.1016/s0040-6090(97)00263-0

Cited by 39 publications

(19 citation statements)

References 10 publications

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“…[21][22][23][24][25] Under high pressure it may transform to a NaCl-type structure with higher coordination. 26 On release of the pressure, a metastable zinc blende-type structure may be produced as an intermediate phase before the stable chalcopyrite structure is restored at ambient pressure.…”

Section: Structure Identification Of the Cu 2 Se And Cis Phasesmentioning

confidence: 99%

CuInSe 2 phase formation during Cu2Se/In2Se3 interdiffusion reaction

Park

Zhang

Kim

et al. 2000

Journal of Applied Physics

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Diffusion couples based upon Cu 2 Se/In 2 Se 3 pairings have been examined in order to identify the kinetics of intermediate phase development and the associated phase equilibria. For the diffusion couples annealed at 550°C for 1.5 h, all phases included in the Cu 2 Se-In 2 Se 3 pseudobinary phase diagram section developed including the CuInSe 2 ͑CIS͒ phase. Also, the In 6 Se 7 phase formed for annealing times in excess of 1.5 h at 550°C, indicating a modification of the diffusion pathway outside the pseudobinary phase diagram section. The growth of the CIS phase formed by reactive diffusion follows parabolic kinetics (x 2 ϭkt) with the k value of 3.3ϫ10 Ϫ8 cm 2 /s. CIS phase precipitates with a dendritic morphology are also produced within the Cu 2 Se side of the diffusion couple far from the initial interface, indicating that In is the fast component during interdiffusion. Based upon electron diffraction analysis and simulation of electron diffraction patterns, the dendritic shaped CIS precipitate structure was uniquely determined to be the metastable zinc blende type rather than the stable chalcopyrite-type structure. The structure and orientation relationship between the metastable CIS phase and the Cu 2 Se matrix satisfy the conditions established for the development of a solid state dendritic morphology.

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Section: Structure Identification Of the Cu 2 Se And Cis Phasesmentioning

confidence: 99%

CuInSe 2 phase formation during Cu2Se/In2Se3 interdiffusion reaction

Park

Zhang

Kim

et al. 2000

Journal of Applied Physics

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“…For industrial applications, electrodeposition is a non-vacuum method for the preparation of ternary semiconductors such as CuInS 2 [20] or CuInSe 2 [21]. Electrodeposition, which is suitable for large scale production, is a low-cost and eco-friendly method for the deposition of ternary semiconductor film electrodes.…”

Section: Introductionmentioning

confidence: 99%

Effect of [Cu]/[Cu+In] ratio in the solution bath on the growth and physical properties of CuInS2 film using one-step electrodeposition

Cheng

Chiang

2011

Journal of Electroanalytical Chemistry

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“…The frequently used complexing agents for electrodeposition of CuInSe 2 thin films include TEA, sodium citrate [13,14], tartaric acid [15][16][17] and potassium thiocyanate [18,19]. TEA is the choice of complexing agent in our experiments.…”

Section: Introductionmentioning

confidence: 99%