Effect of [Cu]/[Cu+In] ratio in the solution bath on the growth and physical properties of CuInS2 film using one-step electrodeposition

Cheng, Kong‐Wei; Chiang, Wei-Hao

doi:10.1016/j.jelechem.2011.07.013

Cited by 24 publications

(18 citation statements)

References 39 publications

(53 reference statements)

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“…This is confirmed with the work of Cheng et al [31] and our previously work [30,32]. The second reduction peak (C2) observed at À 900 mV versus Ag/AgCl presents a rapid increase in the cathodic current, which could be due to the formation of silver sulfide compound.…”

Section: Parameters Of Depositionsupporting

confidence: 91%

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Almessiere

Al–Otaibi

Assaker

et al. 2015

Materials Science in Semiconductor Processing

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Section: Parameters Of Depositionsupporting

confidence: 91%

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Almessiere

Al–Otaibi

Assaker

et al. 2015

Materials Science in Semiconductor Processing

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“…6 Alternative low cost and less toxic solar cells are chalcopyrite based thin lms; these are suitable for optoelectronic devices due to their direct bandgap and high absorption coefficient. 9 The theoretical efficiency for homo-junction thin lm devices is close to 23% and the simulated efficiency of a CuInS 2 solar cell with a traditional structure, Al/ZnO : Al/n-CdS/p-CuInS 2 /Mo with optimum thickness can reach up to 20.4%. 5 CuInS 2 lms, on the other hand, are promising candidates for PV absorber layers, due to the overall lower material cost and fewer toxic compounds in comparison with CuInGaSe 2 absorber layers.…”

Section: Introductionmentioning

confidence: 64%

Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Ünveroğlu

Zangari

2015

RSC Adv.

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The electrodeposition of Cu-In alloy precursors with suitable stoichiometry and consisting mainly of intermetallic compounds, followed by sulfurization, is a promising method to form good quality CuInS 2 thin films. In this work, Cu-In precursors forming intermetallic compounds were electrodeposited from an acidic solution on Mo substrates at 50 C and sulfurized to form p-type CuInS 2 absorber layers. We studied the crystal structure and compositional characteristics of films before and after sulfurization.Intermetallic compounds, namely Cu 11 In 9 and Cu 9 In 4 , have been observed for precursor films suitable to form CuInS 2 , and p-type CuInS 2 phase with small amounts of CuS was formed, showing the chalcopyrite and CuAu-type ordered phases for Cu/In ratios between 1.09-1.34. The carrier density was increased with increasing Cu/In ratio, but the photoelectrochemical response of the films was not directly related to this ratio. Film morphology has a critical influence on the photocurrent response. The highest photoelectrochemical current was achieved from compact and smooth precursors that were electrodeposited at À1.3 V while the lowest value was obtained with a rough dendritic precursor that was electrodeposited at À1.6 V.

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“…Three clear reduction peaks can be observed and are located at -0.62, -0.90 and -1.1 V vs. SCE. The first peak is attributed to the reduction of Cu 2+ to Cu + and In 3+ to In + [2,21]. The second one is ascribed to the reduction of In + to In 0 [2] and the last one corresponds to the formation of CuxInySz species (due to the reduction of Cu + to Cu 0 and In + to In 0 ) [2].…”

Section: Cathodic Polarization Curvesmentioning

confidence: 99%

“…The effect of different experimental conditions on the one-step electrodeposition of CIS films has been thoroughly investigated. So far, the influence of deposition time [17], concentration of precursors [21], applied potential [22] and complexing agents [2] has been studied. However, the effect of supporting electrolyte concentration on one-step electrodeposited CIS film properties has so far not been addressed.…”

Section: Introductionmentioning

confidence: 99%

Effect of supporting electrolyte concentration on one-step electrodeposited CuInS2 films for ZnS/CuInS2 solar cell applications

Rodríguez

Delgadillo

Núñez

et al. 2020

J Solid State Electrochem

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A one-step electrodeposition process is used to obtain CuInS2 (CIS) films on a molybdenum substrate by varying the supporting electrolyte (lithium chloride, LiCl) concentration. The as-deposited samples are characterized by scanning electron microscopy, energy dispersive spectroscopy, profilometry and diffuse reflectance spectroscopy. It is found that different concentrations of LiCl mainly lead to a morphological change and that the chemical composition of the obtained CIS films shifts to the stoichiometric composition for high concentrations of supporting electrolyte. After annealing, the structural analysis from X-ray diffraction reveals that all samples crystallized in the tetragonal phase of CIS. In addition, it is found that the crystallite size increased for samples grown at higher concentrations of LiCl. Optical studies carried out by diffuse reflectance spectroscopy reveal that the band gap values increase from ~1.40 to ~1.45 eV (average) after the annealing process. Finally, zinc sulfide (ZnS) thin films are chemically deposited onto electrodeposited CIS films in order to evaluate the photovoltaic response of ZnS/CIS bilayer systems. We discover that ZnS thin films cover the surface of CIS more effectively for the highest concentration of LiCl and that only the ZnS/CIS bilayer with the CIS film obtained at the highest concentration of LiCl shows a photovoltaic response.

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Effect of [Cu]/[Cu+In] ratio in the solution bath on the growth and physical properties of CuInS2 film using one-step electrodeposition

Cited by 24 publications

References 39 publications

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Effect of supporting electrolyte concentration on one-step electrodeposited CuInS2 films for ZnS/CuInS2 solar cell applications

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Effect of [Cu]/[Cu+In] ratio in the solution bath on the growth and physical properties of CuInS2 film using one-step electrodeposition

Cited by 24 publications

References 39 publications

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Formation of p-type CuInS2 absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Effect of supporting electrolyte concentration on one-step electrodeposited CuInS2 films for ZnS/CuInS2 solar cell applications

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Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors