Preparation and structural properties of MgO films grown on GaAs substrate

Chromík, Š.; Španková, M.; Vávra, I.; Liday, Jozef; Vogrinčič, Peter; Lobotka, P.

doi:10.1016/j.apsusc.2007.10.068

Cited by 8 publications

(8 citation statements)

References 14 publications

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“…Additionally, MgO is a chemically inert material, which seems to minimize the formation of interfacial layers when deposited on Si [4]. It has also been reported that the interface of MgO films grown on p-type InP is very smooth at the atomic scale with no evidence of interfacial reaction [9] and the potential of thin MgO films as an alternative gate dielectrics has been explored in combination with different semiconductor substrates such as Si [4,8], GaN [10], and GaAs [11]. In this work, we analyze the degradation dynamics of relatively thick ($20 nm) MgO layers by means of constant voltage stresses (CVS) and examine their post-BD conduction modes, namely SBD and HBD.…”

Section: Introductionmentioning

confidence: 97%

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

Miranda

Martín-Martínez

O’Connor

et al. 2009

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 97%

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

Miranda

Martín-Martínez

O’Connor

et al. 2009

Microelectronics Reliability

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“…Then the heater was switched off. The typical deposition rate was 0.03-0.1 nm/s [13]. In order to eliminate the arsenic desorption from the GaAs substrate special precautions were made, i.e.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial LSMO films grown on GaAs substrates with MgO buffer layer

Španková¹,

Chromík²,

Vávra³

et al. 2009

Physica Status Solidi (a)

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La0.67Sr0.33MnO3 (LSMO) manganite thin films were deposited using a magnetron dc sputtering on single crystalline GaAs(001) substrates covered by MgO buffer layers with the goal to fabricate, using MEMS technology, a microbolometer operating at room temperature. The crystalline perfection of the thin film structures are characterized by X‐ray diffraction technique, rocking curve measurements, and transmission electron microscopy (TEM). TEM analyses give evidence of the epitaxial growth of the annealed LSMO. Auger Electron Spectroscopy as well as X‐ray Photoemission Spectroscopy are used to investigate compositional properties of the films. The analyses show a stoichiometric LSMO film without any contamination except of the surface where we register some traces of As, C and Mg. The temperature dependence of resistance, measured by a standard four‐probe technique, exhibits a peak at a temperature of 280 K. The maximum temperature coefficient of resistance reaches a value of ∼2.3% K–1 at T = 249 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In some studies, reactive magnetron sputtering was applied to deposit MgO directly on GaAs [3,4]. Direct deposition of MgO by electron beam evaporation without additional oxygen was also reported previously [1,[5][6][7]. Lu et al used an evaporation cell to deposit MgO directly.…”

Section: Introductionmentioning

confidence: 97%

“…Therefore, in some of the studies mentioned above, first GaAs films were prepared in situ and then MgO was deposited [1,4,7,8,15,16]. In other studies, commercially polished GaAs(100) wafers were used after cleaning by wet chemical methods [3,5,9,10,14,17]. In addition, oxide desorption by annealing at higher temperatures in the absence of As flux was used previously for cleaning the GaAs surface [18].…”

Section: Introductionmentioning

confidence: 99%

Growth, characterization, and stability testing of epitaxial MgO (100) on GaAs (100)

et al. 2020

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Epitaxial MgO (100) films have been grown on GaAs (100) by evaporation of Mg in the presence of 5 × 10 -6 Torr of oxygen. Prior to the growth of MgO, the GaAs (100) substrate was cleaned by Ar ion sputtering and annealing. MgO (100) on GaAs (100) was in situ characterized with Auger electron spectroscopy (AES), and ex situ by scanning electron microscopy (SEM), X-ray diffraction (XRD), highresolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction patterns indicated that the MgO film has grown predominantly in the cubic phase with the (100) plane parallel to the GaAs ( 100) substrate. HRTEM results have confirmed the epitaxial growth of MgO with MgO (100)[001]║ GaAs (100)[001]. Despite the high lattice misfit, the epitaxial MgO ( 100) is grown on GaAs (100) due to the 4 : 3 relationship (4 aMgO : 3 aGaAs) between MgO (100) and GaAs (100). The formation of a 4:3 superstructure reduces the lateral misfit between MgO (100) and GaAs (100) to 0.65%. To test the potential of MgO as a protection layer for III-V semiconductor based photo-electro catalytic devices for water splitting in alkaline media the reaction of MgO films with H2O and NaOH was investigated. Flake-like Mg(OH)2 structures appear to have formed on top of the MgO films treated with NaOH.

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Preparation and structural properties of MgO films grown on GaAs substrate

Cited by 8 publications

References 14 publications

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

Epitaxial LSMO films grown on GaAs substrates with MgO buffer layer

Growth, characterization, and stability testing of epitaxial MgO (100) on GaAs (100)

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