Preparation and structural evolution of Mo/SiOx protective coating on CoSb3-based filled skutterudite thermoelectric material

Xia, Xugui; Huang, Xiangyang; Li, Xiaoya; Gu, Meng; Qiu, Pengfei; Liao, Jincheng; Tang, Yuyan; Bai, Shengqiang; Chen, Lidong

doi:10.1016/j.jallcom.2014.03.086

Cited by 16 publications

(5 citation statements)

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“…have been widely studied. The output performance and service behavior of CoSb 3 -based TE devices were greatly improved by the design and optimization of electrode, interface and barrier layer, and the protection coating [225,232,234,251,252] for preventing Sb sublimation and oxidation. Table 2 summarizes some available CoSb 3 -based TE devices reported in recent years.…”

Section: Cosb 3 -Based Te Devicesmentioning

confidence: 99%

A review of CoSb3-based skutterudite thermoelectric materials

et al. 2020

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The binary skutterudite CoSb3 is a narrow bandgap semiconductor thermoelectric (TE) material with a relatively flat band structure and excellent electrical performance. However, thermal conductivity is very high because of the covalent bond between Co and Sb, resulting in a very low ZT value. Therefore, researchers have been trying to reduce its thermal conductivity by the different optimization methods. In addition, the synergistic optimization of the electrical and thermal transport parameters is also a key to improve the ZT value of CoSb3 material because the electrical and thermal transport parameters of TE materials are closely related to each other by the band structure and scattering mechanism. This review summarizes the main research progress in recent years to reduce the thermal conductivity of CoSb3-based materials at atomic-molecular scale and nano-mesoscopic scale. We also provide a simple summary of achievements made in recent studies on the non-equilibrium preparation technologies of CoSb3-based materials and synergistic optimization of the electrical and thermal transport parameters. In addition, the research progress of CoSb3-based TE devices in recent years is also briefly discussed.

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Section: Cosb 3 -Based Te Devicesmentioning

confidence: 99%

A review of CoSb3-based skutterudite thermoelectric materials

et al. 2020

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“…To simultaneously solve the Sb sublimation problem and SKDs oxidation at high temperatures, our team put forward a multi‐layer structure coating consisting of a dense inner metallic film and an outer thicker oxide layer . Xia et al attempted to deposit a Mo/SiO x multilayer film on the p‐type Ce 0.9 Fe 3 CoSb 12 SKD surface as a protective coating by magnetron sputtering . A thermal aging test was conducted under vacuum at 550–650 °C.…”

Section: Development Of Filled‐skutterudite‐based Devices For Power Gmentioning

confidence: 99%

Thermoelectric Devices for Power Generation: Recent Progress and Future Challenges

et al. 2015

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Thermoelectric (TE) devices for power generation have been attracting increasing attention on account of their advantages such as solid-state operation, good stability, and high reliability. This paper presents an overview of the design principle, fabrication methods and testing technology of TE power generation devices. Particular attention is paid to skutterudite-based devices regarding electrode fabrication, barrier layer design, interface optimization, protective coating, and evaluation of elements and modules. The development of Bi 2 Te 3 -based devices for power generation focusing specifically on the optimization of Bi 2 Te 3 /electrode joints and fabrication and evaluation of Bi 2 Te 3 -based modules is summarized. The future challenges concerning TE devices for power generation are discussed.

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“…(2)电极材料的膨胀系数要与其相连接的热电材料尽量接近, 从而避免应力集中降低图 8 热电器件全参数优化设计逻辑框架 [40] Fig. 8 Logical framework for the full-parameter optimization of a thermoelectric power generation module [40] 材料或结合面的强度甚至导致断裂; 3 2.2 界面接触性能接触电阻和接触热阻是衡量界面结合质量的关键参数。热电元件的界面接触电阻可基于四探针原理测量, 而接触热阻的评价较为困难, 尚无可直接测量的方法 [45] 。降低电极和热电材料间的接触电阻和接触热阻的有效方法是在两者间引入适当的过渡层(或称界面层)。表 1 列举了典型热电发电器件中所选用的过渡层材料。目前, 在低温 Bi 2 Te 3 基热电器件中通常采用电镀 Ni 的方式制备过渡层, Ni 层厚度在 3~10 μm 左右 [59][60] 。Buist 等 [59] 报道了未预镀镍的碲化铋基材料与 Bi-Sn 合金焊料的接触电阻率约为 100~200 μΩ [79] 使用 Ti-Al 作过渡层, 使得界面电阻率保持在 10 μΩ•cm 2 以下。 Fleurial 等 [80] 使用 Ti 作电极, Zr 作过渡层, 其接触电阻率约为 19 μΩ•cm 2 。 Muto 等 [31] 使用 CoSi 2 和 Co 2 Si 分别作为 n 型和 p 型方钴矿的连接层, 其接触电阻率在 2 μΩ•cm 2 左右。在高温硅锗合金热电元件的研究中, NASA-PL 先后报道了多种界面结构和界面结合技术 [81][82][83][84] , 例如 W/C/SiGe 元件初始接触电阻率低于 100 μΩ•cm 2 , 进一步利用 Sealed C 代替 C 作为过渡层制备的 W/Sealed C/SiGe 元件的初始接触电阻率仍保持相同的低值; NASA-JPL 在 MHW-RTG 和 GPHS-RTG 中采用掺杂的 Si-Mo 合金作为电极与 SiGe 直接连接, 同样获得了较小的界面接触电阻。另外, 1996 年, 日本 Lin 等 [85] 报道了一种(Si-MoSi 2 )/SiGe 热电发电元件, 虽具有良好的界面结构, 但接触电阻率高于 2000 μΩ•cm 2 。2000 年, Lin 等 [86] [88][89][90] 。国际上多个研究团队先后报道了在有氧环境下 SKD 在 400 ℃以上会发生严重的氧化(尤其是 p 型材料会粉碎性开裂)并最终导致器件完全失效 [91][92][93] Fig. 9 Diagram of main failure modes of thermoelectric devices 成器件的关键部件(热电材料、电极、基板等)在长期服役过程中将不可避免地产生性能劣变和功能损伤, 尤其是器件中众多异质界面极易产生结构蜕变、损伤甚至破坏。NASA-JPL 研究了 RTG 中使用的 SiGe 和 PbTe 器件的服役特性, 公开报道了多任务同位素温差电池(MMRTG)的输出功率年衰减率约为 3%~5%/ [94] 。与空间电源 RTG 相比, 工业余热、汽车尾气废热发电等地面应用的服役环境更为复杂和多变, 例如冷热交替的热循环会引起应力疲劳, 高湿空气对器件主要部件的氧化与腐蚀会造成器件损伤。目前, 已有部分工作运用有限元分析(FEM)开展了单一外场条件下器件的静态或瞬态特性的模拟仿真研究(如温度场、电势场、热流量分布等) [95][96][97][98][99][100][101] 。另外, 近年来少数研究人员开始尝试热电器件中热 电结构耦合的研究 [102][103]…”

Section: 器件设计原理unclassified

Technologies and Applications of Thermoelectric Devices: Current Status, Challenges and Prospects

张骐昊¹,

柏胜强²,

陈立东³

2019

Journal of Inorganic Materials

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Thermoelectric (TE) power generation technology is highly expected for various applications such as special power supply, green energy, energy harvesting from the environment and harvesting of industrial waste heat. Over the past years, the record of zT values of TE materials has been continuously updated, which would bode well for widespread practical applications of TE technology. However, the TE device as the core technology for the TE application lags behind the development of TE materials. Especially, the large-scale application of TE power generation technology is facing bottlenecks and new challenges. This review presents an overview of the recent progress on TE device design and integration with particular attentions on device optimization design, electrode fabrication, interface engineering, and service behavior. The future challenges and development strategies for large-scale application of thermoelectric power generation are also discussed.

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Preparation and structural evolution of Mo/SiOx protective coating on CoSb3-based filled skutterudite thermoelectric material

Cited by 16 publications

References 30 publications

A review of CoSb3-based skutterudite thermoelectric materials

A review of CoSb3-based skutterudite thermoelectric materials

Thermoelectric Devices for Power Generation: Recent Progress and Future Challenges

Technologies and Applications of Thermoelectric Devices: Current Status, Challenges and Prospects

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