Preparation and spectroscopic properties of Nb2O5 nanorods

Niobium pentoxide (Nb2O5) thin films: rf Power and substrate temperature induced changes in physical properties

“…It is also observed that the near band edge emission has higher intensity than the deep-level emission. However, in the case of Nb 2 O 5 film deposited at 300 • C and rf power of 200 W, the intensity of deep-level emission is high, which attributed the more oxygen vacancies are introduced in the film due to the high deposition rate [23]. This is also in conformity with the result of energy band gap data of said conditioned sample.…”

“…The deep level emission at 495 nm may be attributed to the native defects like oxygen vacancies introduced during the film deposition. Zhou et al [23] reported that the green band emission of Nb 2 O 5 films at 495 nm is ascribed to the structural defects such as distorted NbO 6 octahedral groups.…”

Synthesis and Characterization of Nano-Particles of Niobium Pentoxide with Orthorhombic Symmetry

“…The sample with an addition of HCl in the synthesis through the Pechini method is shown in Figure 7d, with the highest peak being at 607 nm (2.0 eV). The ultraviolet emission band is at about 40 nm and some authors [23] have attributed this to the near-bandgap emission from Nb 2 O 5 . The other intensity band is ascribed to structural defects such as distorted NbO 6 octahedral groups.…”

Hydrothermal synthesis and investigation of optical properties of Nb5+-doped lithium silicate nanostructures

“…Considering that the energy gap of bulk lithium silicates is above 3.3 eV, the purple-blue photoluminescence appeared as a shoulder at 425 nm (approximately 2.92 eV) is probably due to a triplet to ground state transition of a neutral oxygen vacancy defect, as suggested by ab initio molecular orbital calculations for many other well-studied metal oxides. Also, the emission band related to the Nb(V) centers in the structure is expected to be superimposed on the shoulder at 425 nm [44]. In comparison, the synthesized Nb 5?…”