1993
DOI: 10.1016/0040-6090(93)90741-7
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Preparation and properties of plasma-polymerized thiophene (PPT) conducting films

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Cited by 47 publications
(39 citation statements)
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“…5 Although the excited plasma species are mainly high-energy electrons that are relatively indiscriminate in rupturing chemical bonds, the substrate can be kept at the ambient temperature. 12 Overall, plasma polymerization is an inexpensive processing route.…”
Section: Introductionmentioning
confidence: 99%
“…5 Although the excited plasma species are mainly high-energy electrons that are relatively indiscriminate in rupturing chemical bonds, the substrate can be kept at the ambient temperature. 12 Overall, plasma polymerization is an inexpensive processing route.…”
Section: Introductionmentioning
confidence: 99%
“…It is a solvent-free, room temperature process that does not entail the use of chemical oxidants. Through plasma polymerization, ultra-thin films with controllable thicknesses in the nanometer range can easily be formed on surfaces of substrates (17,18). The mechanism of plasma polymerization is attributed to the collisions of the monomer molecules with the electrons generated by the electric discharges, and such reactions are a major source of free radicals and negative ions (19).…”
Section: Introductionmentioning
confidence: 99%
“…3 Recently, plasma has been used for the preparation of PTh. 4 Plasma-polymerized thiophene conducting films have been prepared away from the high rf flux density region in the reactor. An inert gas (Ar) is passed through the plasma zone and its excited species is used for initiating polymerization.…”
Section: Introductionmentioning
confidence: 99%
“…An inert gas (Ar) is passed through the plasma zone and its excited species is used for initiating polymerization. 4 Semiconductive thin organic polymer films have been prepared by plasma polymerization of 1-benzothiophene. 5 Also, plasma-polymerized thiophene films have been evaluated as passivating layers on GaAs for metal insulator semiconductor (MIS) field-effect transistors.…”
Section: Introductionmentioning
confidence: 99%