发光学报
 2018
DOI: 10.3788/fgxb20183907.0968
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Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO2 Active Layer

张建东 Zhang Jian-dong1,
刘贤哲 Liu Xianzhe2,
张啸尘 Zhang Xiao-chen3
et al.
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