2004
DOI: 10.1007/s00339-002-2052-x
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Preparation and properties of COx films

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Cited by 6 publications
(13 citation statements)
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“…Additionally, as nitrogen is a trivalent atom, any substituted C atom by a N one would leave at least one dangling bond, which would also tend to lower the mechanical performance of the films. In addition, the incorporation of hydrogen (from NH 3 ) in the films, represented in Si-H, N-H bonds, further decreases both H and E as reported by Kulikovsky et al [53]. In addition, the decrease of both H and E could be also related to the difference in microstructure (fully dense or porous films) as discussed previously in the Surface morphology section, since textured films with a porous network possess limited mechanical properties, due to a moderate coordination number [54].…”
Section: Hardness and Young's Modulussupporting
confidence: 57%
“…Additionally, as nitrogen is a trivalent atom, any substituted C atom by a N one would leave at least one dangling bond, which would also tend to lower the mechanical performance of the films. In addition, the incorporation of hydrogen (from NH 3 ) in the films, represented in Si-H, N-H bonds, further decreases both H and E as reported by Kulikovsky et al [53]. In addition, the decrease of both H and E could be also related to the difference in microstructure (fully dense or porous films) as discussed previously in the Surface morphology section, since textured films with a porous network possess limited mechanical properties, due to a moderate coordination number [54].…”
Section: Hardness and Young's Modulussupporting
confidence: 57%
“…It indicates the decrease of the silicon content in the films. Evident up-shift of the G-band and its increasing asymmetry supports this conclusion [3,18]. The frequencies of the G-band are collected in the second column of Table 2.…”
Section: Raman Spectrasupporting
confidence: 51%
“…The former corresponds to the second order feature of a-Si, the latter to the vibrations of the Si-H n species ( [17] and references therein). As the CH 4 flow rate increases to 3 sccm, another weak broad band at about 750 cm − 1 emerges, which may be attributed to the formation of the Si-C bonds [3]. As expected, the band corresponding to the Si-H n vibrations shifts to higher wavenumbers as the CH 4 flow rate increases [17].…”
Section: Raman Spectramentioning
confidence: 73%
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