Preparation and properties of Al2O3 films by d.c. and r.f. magnetron sputtering

Deshpandey, C.V.; Holland, L.

doi:10.1016/0040-6090(82)90251-6

Cited by 37 publications

(10 citation statements)

References 9 publications

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“…Methods of synthesizing aluminum oxide thin films include chemical vapor deposition combined with ionbeam irradiation, 1 molecular beam epitaxy using a solid aluminum source and N 2 O, 2 laser-induced deposition from condensed layers of organoaluminum compounds and water, 3 and magnetron sputter deposition. 4 Traditional radio frequency ͑rf͒ sputtering uses an aluminum oxide target and generally results in low deposition rates. Direct current ͑dc͒ reactive sputtering of aluminum in an oxygen/argon atmosphere can produce stoichiometric Al 2 O 3 at high rates.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Bhatia

et al. 2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inStabilization of tetragonal and cubic phases of ZrO 2 in pulsed sputter deposited ZrO 2 / Al 2 O 3 and ZrO 2 / Y 2 O 3 nanolayered thin films Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films J. Hard and conductive carbon nanodome thin films deposited by rf magnetron sputteringAluminum oxide films were grown by reactive magnetron sputtering. In order to maintain a stable deposition process and high deposition rate, a pulsed direct current bias was applied to the aluminum target and the substrate. An external solenoid was used to form a magnetic trap between the target and the substrate. The influence of substrate temperature, substrate bias, and the magnetic trap on film growth and properties was studied by different surface and thin-film analysis techniques and electrical measurements. Normally, amorphous alumina films were produced. However, under optimum process conditions, crystalline alumina films can be obtained at temperatures as low as 250°C, with a hardness ϳ20 GPa and excellent electrical insulating properties.

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Section: Introductionmentioning

confidence: 99%

Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Bhatia

et al. 2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…1 Thin films of Al 2 O 3 have been used as wear resistant and protective coatings. 2 In addition, Al 2 O 3 is highly insulating and transparent with convenient refractive index value feasible for microelectronic and optical applications. [3][4][5][6][7] The Al 2 O 3 crystal exists in several polymorphs, i.e., the metastable ␥, ␦, , , , and , in addition to the thermodynamically stable ␣-Al 2 O 3 which is the most common and most excellent in property.…”

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confidence: 99%

Localized epitaxial growth of α-Al2O3 thin films on Cr2O3 template by sputter deposition at low substrate temperature

Jin

Nakao

Wang

et al. 2003

Applied Physics Letters

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Low-temperature growth of ␣-Al 2 O 3 films by sputtering was studied with x-ray diffraction and high-resolution transmission electron microscopy ͑HRTEM͒. Pure ␣-Al 2 O 3 film was formed at 400°C using Cr 2 O 3 as template, whereas amorphous or -Al 2 O 3 was formed without Cr 2 O 3 . HRTEM revealed localized epitaxial growth of ␣-Al 2 O 3 on Cr 2 O 3 with the relationship ͓011͔ Al 2 O 3 /͓011͔ Cr 2 O 3 , suggesting the importance of Cr 2 O 3 as a structural template for the growth of ␣-Al 2 O 3 , in addition to other contributions such as good stoichiometry, low sputter pressure, and low deposition rate under optimized deposition conditions. Successful growth of ␣-Al 2 O 3 by sputtering at 400°C or below makes the film widely applicable to even glass substrates.

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“…Dual ion beam sputtering under vacuum can enhance chemical bonding through energy supplied by the ion bombardment that increases the collisions between ions or atoms. In addition, the RF plasma effect can be separated from the sample and will confine ion beams between the target and the sample [5,6]. Therefore, dual ion beam sputtering utilizing ion beam assisted deposition conditions can improve the adhesion, density, stoichiometry, and low optical absorption (at short wavelengths) in thin films.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen content on barrier properties of silicon oxide thin film deposited by dual ion-beam sputtering

Seong

Choi

Yoon

2006

Journal of Non-Crystalline Solids

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Preparation and properties of Al2O3 films by d.c. and r.f. magnetron sputtering

Cited by 37 publications

References 9 publications

Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Localized epitaxial growth of α-Al2O3 thin films on Cr2O3 template by sputter deposition at low substrate temperature

Effect of oxygen content on barrier properties of silicon oxide thin film deposited by dual ion-beam sputtering

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