2006
DOI: 10.1016/j.jnoncrysol.2005.10.024
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Effect of oxygen content on barrier properties of silicon oxide thin film deposited by dual ion-beam sputtering

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Cited by 5 publications
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“…We assume that this smoothing effect is caused by the amorphous nature of films grown by IBSD at room temperature. It was also previously reported by other groups for reactive (Mateev et al, 2018;Seong et al, 2006) and non-reactive (Wu & Lee, 2006) SiO 2 deposition; in both cases, thick (> 400 A ˚) SiO 2 layers demonstrated roughnesses of less than 2 A ˚. For thin layers (< 400 A ˚) the situation is not so obvious.…”
Section: Analysis Of Grown Substratessupporting
confidence: 78%
“…We assume that this smoothing effect is caused by the amorphous nature of films grown by IBSD at room temperature. It was also previously reported by other groups for reactive (Mateev et al, 2018;Seong et al, 2006) and non-reactive (Wu & Lee, 2006) SiO 2 deposition; in both cases, thick (> 400 A ˚) SiO 2 layers demonstrated roughnesses of less than 2 A ˚. For thin layers (< 400 A ˚) the situation is not so obvious.…”
Section: Analysis Of Grown Substratessupporting
confidence: 78%