PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION

Ismail, Raid A.; Yahya, Khalid Z.; Abdulrazaq, Omar A.

doi:10.1142/s0218625x05007074

Cited by 46 publications

(17 citation statements)

References 5 publications

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“…The visible light incident on ZnO/Si heterojunction passes through ZnO layer, get absorbed by silicon substrate and then e-h pairs are generated near the ZnO-Si interface. 27 Figure 8 demonstrates the spectral responsivity ðR Þ plots of the ZnO/p-Si structure prepared at di®erent annealing times for the wavelength range (350-900) nm at 7.5 V reverse bias. There are two peaks of response located at 650 nm and 870 nm with maximum responsivity of 0.39 A/W at 875 nm for the photodetector annealed for 60 min.…”

Section: Resultsmentioning

confidence: 99%

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

et al. 2015

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In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; stepannealing at 600 C. Structural, electrical, and optical properties of the ZnO NPs¯lms deposited on quartz substrates were studied as a function of annealing time. X-ray di®raction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/ p-Si heterojunction photodetectors showed an improving recti¯cation ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V ) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

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Section: Resultsmentioning

confidence: 99%

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

et al. 2015

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“…It is suggested that the self‐redox reaction of Ag 2 O may occur under the influence of indoor light. Ag 2 O is a p‐type semiconductor 38. The photo‐generated electrons and holes in Ag 2 O may facilitate its redox reaction towards the formation of Ag NPs and oxygen gas, as indicated in Equations 2 and 3.…”

Section: Resultsmentioning

confidence: 99%

Silver Nanoparticles Deposited Layered Double Hydroxide Nanoporous Coatings with Excellent Antimicrobial Activities

Chen

Gunawan

Lou

et al. 2011

Adv Funct Materials

154

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Simple and facile processes to produce silver nanoparticles deposited layered double hydroxide (Ag-LDH) coatings are reported. High quality nanoporous LDH coatings are obtained under hydrothermal conditions via an improved in situ growth method by immersing the substrates in LDH suspensions after removal of free electrolytes. Different types of substrates including metal, ceramics, and glass with planar and non-planar surfaces can all be coated with the oriented LDH films with strong adhesion. The pore size can be easily tuned by changing the metal:NaOH ratio during the precipiation process of LDH precursors. In the presence of LDH coatings, silver ions can be readily reduced to metallic silver nanoparticles (Ag NPs) in aqueous solutions. The resulting Ag NPs are incorporated evenly on LDH surface. The Ag-LDH coating exhibits excellent and durable antimicrobial activities against both Gram-negative (E. Coli and P. Aeruginosa) and Gram-positive (B. Subtilis and S. Aureus) bacteria. Even at the 4th recycled use, more than 99% of all types of bacteria can be killed. Moreover, the Ag-LDH coating can also effectively inhibit the bacterial growth and prevent the biofilm formation in the nutrient solutions. These newly designed Ag-LDH coatings may offer a promising antimicrobial solution for clinical and environmental applications.

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“…The effect of annealing duration on the ideality factor calculated forward bias I-V characteristic was observed is in the range of those reported for ITO/ poly(3,4,ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/poly(2-methoxy-5-(2-ethlhexyloxy))-1,4-phenylenevinylene)(MEH-PPV)/Alq3/Lif/Au Schottky diode [24], and comparable to that those reported for ITO/MEH-PPV/A21 [28]. Large values of ideality factor were obtained due to the presence of recombination in the junction deposition or at junction interface [25], besides some structural defects and lattice mismatch between ZnO and CuGaO2 [19]. The improvement of the device performance is attributed to the smoother surface [26].…”

Section: Methodsmentioning

confidence: 62%

Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method

et al. 2017

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Abstract. In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34˚ while CuGaO2 (015) peak is not visible at 44˚С. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.

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PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag₂O/Si ISOTYPE HETEROJUNCTION

Cited by 46 publications

References 5 publications

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

Silver Nanoparticles Deposited Layered Double Hydroxide Nanoporous Coatings with Excellent Antimicrobial Activities

Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method

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PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION

Cited by 46 publications

References 5 publications

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

Silver Nanoparticles Deposited Layered Double Hydroxide Nanoporous Coatings with Excellent Antimicrobial Activities

Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

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Product

Resources

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PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag₂O/Si ISOTYPE HETEROJUNCTION

Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method