Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum

Jiang, Minhong; Liu, Xinyu; Chen, Guohua; Cheng, Jinrong; Zhou, Xiujuan

doi:10.1007/s10854-009-9856-9

Cited by 14 publications

(7 citation statements)

References 24 publications

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“…It is mainly due to the nano/micron range size of ZnO sheets and indicating the effective photoabsorption ability for hetero structure (TiO 2 /ZnO) [28]. This changes in absorbance suggested that the range of photo response can be adjustable by nanocomposites, whereas only TiO 2 is used as photoanode.…”

Section: Uv-vis Studiesmentioning

confidence: 99%

Solid state dye sensitized solar cells: Eosin-Y sensitized TiO2–ZnO/PEO–PVDF-HFP-MMT electrolytes/MWCNT–Nafion® counter electrode

Prabakaran

Mohanty

Nayak

2015

Ceramics International

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Section: Uv-vis Studiesmentioning

confidence: 99%

Solid state dye sensitized solar cells: Eosin-Y sensitized TiO2–ZnO/PEO–PVDF-HFP-MMT electrolytes/MWCNT–Nafion® counter electrode

Prabakaran

Mohanty

Nayak

2015

Ceramics International

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“…73,74 It is known that when ZnO films are under vacuum annealing, oxygen can be released from the grain boundary and/or lattice of ZnO films increasing V O defects. 75 The red-shift of the absorption edge and E g by adding H 2 has been witnessed by Zhu et al 76 After the hydrogenation, the band gap decreased, which might be due to the passivation of the V O by H + . 73 The red-shift in ZnO has been explained by several authors based on variation of the average particle size.…”

Section: ■ Results and Discussionmentioning

confidence: 90%

“…Compared with the U-ZnO sample, (inset of Figure a), the E g of the vacuum-annealed sample exhibits a blue-shift but a red-shift after hydrogen annealing was also observed. The widening of the band gap can be attributed to the increase of carrier concentration according to the Burstein–Moss effect (B–M). , It is known that when ZnO films are under vacuum annealing, oxygen can be released from the grain boundary and/or lattice of ZnO films increasing V O defects . The red-shift of the absorption edge and E g by adding H 2 has been witnessed by Zhu et al After the hydrogenation, the band gap decreased, which might be due to the passivation of the V O by H + .…”

Section: Resultsmentioning

confidence: 98%

Room-Temperature Ferromagnetism Induced by High-Pressure Hydrogenation of ZnO

et al. 2019

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In this work, we report direct evidence of ferromagnetism in hydrogenated ZnO sub-micrometric powders. Hydrogen (H2) was incorporated under a high-pressure heat treatment in a sealed reactor. Ferromagnetism at room temperature can be activated and deactivated by annealing in H2 and air atmospheres, respectively. Hydrogen incorporation in ZnO structure was observed from X-ray absorption near-edge structure spectra where hydrogen acts as a shallow donor transferring electrons to the conduction band (Zn 4s). The Raman measurements evidence clear distortions in chemical environments of Zn atoms associated with defect formation. Our results suggest that magnetism is a superficial phenomenon probably related to the surface bonding of hydrogen to Zn (or O) on polar ZnO surfaces.

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“…15 Although the Ti atoms may incorporate interstitially into the ZnO hexagonal crystal lattices, a moderate concentration of Ti atoms not only reduces the number of Ti 4+ carrier scattering centers, but also increases the grain size of the TZO thin film and increases the optical transmittance. 16 Therefore, in this study, we propose to combine the advantages of Ga and Ti elemental doping in ZnO as a high performance Ga-doped TiZnO (GTZO) for OLED applications. More importantly, the film fabrication does not require expensive equipment for atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD).…”

Section: Introductionmentioning

confidence: 99%

Ga-doped TiZnO transparent conductive oxide used as an alternative anode in blue, green, and red phosphorescent OLEDs

Chang

Liu

et al. 2014

Phys. Chem. Chem. Phys.

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X-ray diffraction was used to study the optoelectronic characteristics of Ga-doped TiZnO (GTZO) thin film and revealed increased crystallinity with annealing temperatures ranging from as-grown to 450 °C. The low thin film resistivity of 6.1 × 10(-4) Ω cm and the average high optical transmittance of 93% in the wavelength range between 350 and 800 nm make GTZO an alternative candidate for application in organic light-emitting diodes (OLEDs). Both GTZO and indium-tin-oxide (ITO) anodes are employed for the successful fabrication of blue, green, and red phosphorescent OLEDs. The similar device electrical characteristics observed could be interpreted as evidence of the effectiveness of doping Ga in TiZnO. The simplified tri-layer blue, green, and red phosphorescent OLEDs demonstrated high performance with respective maximum efficiencies of 19.0%, 14.5%, and 9.1%, representing an improvement over ITO-based OLEDs. Furthermore, the OLEDs with the GTZO anode exhibited superior performance at higher current densities, demonstrating high potential for OLED display and lighting applications.

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Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum

Cited by 14 publications

References 24 publications

Solid state dye sensitized solar cells: Eosin-Y sensitized TiO2–ZnO/PEO–PVDF-HFP-MMT electrolytes/MWCNT–Nafion® counter electrode

Solid state dye sensitized solar cells: Eosin-Y sensitized TiO2–ZnO/PEO–PVDF-HFP-MMT electrolytes/MWCNT–Nafion® counter electrode

Room-Temperature Ferromagnetism Induced by High-Pressure Hydrogenation of ZnO

Ga-doped TiZnO transparent conductive oxide used as an alternative anode in blue, green, and red phosphorescent OLEDs

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