Preparation and optimization of SnOx thin film by solution method at low temperature

Ning, Honglong; Zhang, Xu; Wang, Shuang; Yao, Rihui; Liu, Xianzhe; Hou, Danqing; Ye, Qiannan; Li, Jinxiong; Huang, Jiangxia; Cao, Xiuhua; Peng, Junbiao

doi:10.1016/j.spmi.2020.106400

Cited by 6 publications

(3 citation statements)

References 36 publications

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“…All these advantages are in line with the mainstream concepts of environmental protection, greenness and energy conservation, as well as being conducive to long-term development. Besides, the solution method is suitable for large-area film production and suitable for large-scale production in factories.Otherwise, in our previous research [17], the X-ray photoelectron spectroscopy (XPS) characterization shows that the atomic ratio of SnO 2 in the SnOx film, which is annealed at 100 • C by solution method is 94.49%. It can be deduced from this that the composition of the film samples annealing at 300 • C is mostly SnO 2 in this research.…”

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confidence: 90%

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Preparation of Highly Transparent (at 450–800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse

Zhang

Guo

et al. 2020

Coatings

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High-quality SnO2:Si films and SnO2:10 at.% Ga films were prepared by the solution method. The roughness of films is below 1.08 nm, and possess exceptional transparency (>75%) and decent semiconductor properties. Based on this, the SnO2:Si/SnO2: Ga homojunctions with different Si doping concentrations were prepared. It is found that the conductivity of the SnO2:Si thin film gradually increases, and the rectification characteristics of the homojunction are optimized with increasing Si doping content. The SnO2:15 at.% Si/SnO2:10 at.% Ga homogeneous junction has the best performance, the turn-on voltage is as low as 5.6 V, and it also exhibits good unidirectional conductivity. The photoresponse of the SnO2:15 at.% Si/SnO2:10 at.% Ga homojunction under the lights of red, yellow, and purple was explored respectively. The result shows that the device responds strongly to purple light. Compared with the test results in the dark environment, the device current increases by two orders, which is expected to be applied in the field of near-ultraviolet detection.

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confidence: 90%

“…Otherwise, in our previous research [17], the X-ray photoelectron spectroscopy (XPS) characterization shows that the atomic ratio of SnO 2 in the SnOx film, which is annealed at 100 • C by solution method is 94.49%. It can be deduced from this that the composition of the film samples annealing at 300 • C is mostly SnO 2 in this research.…”

mentioning

confidence: 90%

Preparation of Highly Transparent (at 450–800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse

Zhang

Guo

et al. 2020

Coatings

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“…For example, for the speed of 1 m min −1 and the oven length of 5 m, the curing time of each treatment layer is limited to 5 min [27,[35][36][37], while these methods require a longer treatment time. Solution-processed deposition offers the advantages of a simple process, high-throughput, high material utilization rate, and easy control of chemical components, which provides the possibility for large-area preparation of metal oxide semiconductor [10][11][12][13][14]. In the study of solution preparation of MOS-TFT, the active layer is mainly made of precursor prepared by sol-gel [15,16] or nanoparticles (NPs) dispersed in carrier solvent [17][18][19], which are deposited on the substrate by spin coating method, inkjet printing method and so on.…”

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confidence: 99%

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

et al. 2021

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The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

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Time-Domain Thermoreflectance Study of the Thermal Transport Properties of All-Solid-State Ionic Thermoelectric Material

Chi

Zhang

et al. 2023

Int J Thermophys

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Preparation and optimization of SnOx thin film by solution method at low temperature

Cited by 6 publications

References 36 publications

Preparation of Highly Transparent (at 450–800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse

Preparation of Highly Transparent (at 450–800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

Time-Domain Thermoreflectance Study of the Thermal Transport Properties of All-Solid-State Ionic Thermoelectric Material

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