Preparation and microwave characterization of PbTiO₃ceramic and powder

Abstract

The ceramics of PbTiO 3 and its powders have been prepared by a sol-gel process. The constitution of its phase and structure was examined by x-ray diffraction and Fourier transform infrared spectroscopy. Characterization studies were performed to determine the effects of particle size and degree of tetragonality. The dielectric properties of ceramics and powders of PbTiO 3 , composited with paraffin, were measured from 1 MHz to 18 GHz. All samples exhibited evidence of relaxation phenomena in their dielectric spectra. The relaxation frequencies increased with decreasing particle size.

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

“…This behavior of e 0 and e 00 may be due to the interface states can not follow the ac signal at high frequency, because the carrier life time of interface trapped charges (s) are much larger than 1/x at very high frequency (x), i.e., the charges at interface can not follow an ac signal. Such a behavior was observed by several authors [38,42,43].…”

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

“…We believe that trapped charges have sufficient energy to escape from traps located between the metal and semiconductor interface in the n-Si band gap. [48][49][50][51] The temperature-dependent reverses-bias C À2 versus V characteristics are presented in Fig. 8.…”

Studies on electrical and the dielectric properties in MS structures

“…This behavior in dielectric properties (e 0 , e 00 and tan d) of MS Sn/p-Si (MS) structures at the high frequencies may be due to the interface states that cannot follow the ac signal at high frequency. The carrier lifetime of interface trapped charges are much larger than 1/x at very high frequency, that is, the charges at interface cannot follow an ac signal [13,19,42,43].…”