Preparation and fundamental physical properties of Sn₂SbS₂I₃ and Pb₂SbS₂I₃ compounds

Abstract

The oriented ingots of isostructural compounds Sn,SbSZ13 and Pb,SbS,13 were prepared using a modified Bridgman method. The lattice parameters of the prepared orthorhombic compounds have been determined by a X-ray powder diffraction analysis. From the spectral response of the photoconductivity the following values for the forbidden zone of the prepared sulfides-iodides were found: E,(Sn,SbS,13) 1.5 eV, E,(Pb,SbS,I,) = 2.0 eV.

Hidden spontaneous polarisation in the chalcohalide photovoltaic absorber Sn2SbS2I3

“…6). Notably, this electronic structure allows the explanation of the reported 'anomalous' trend in band gap energies within the A 2 SbS 2 I 3 (A = Sn, Pb) isostructure family, for which Starosta et al 12 found a gap 0.5 eV larger for the Pb-based compound. While band gaps of conventional semiconductors tend to decrease upon substitution of heavier elements, due to increased orbital energies, we witness a strong contradiction to this trend in this material class.…”

“…§ The substitution of Sn with Pb and S with Se has been demonstrated for Sn 2 SbS 2 I 3 . [10][11][12]…”

“… 10 Later, Dolgikh 11 prepared both Sn 2 SbS 2 I 3 and the isostructural, isoelectronic Pb 2 SbS 2 I 3 compound and investigated the optical dielectric response. Then in 1990, Starosta et al 12 prepared both antimony sulfoiodide compounds and used photoconductivity measurements to determine optical band gaps of 1.5 and 2.0 eV for the Sn and Pb-based materials, respectively. They also discussed the seemingly anomalous trend of increased band gap with chemical substitution of heavier elements.…”

Heteroleptic Tin-Antimony Sulfoiodide for Stable and Lead-free Solar Cells

“…This value is close to that Article previously reported (1.50 eV). 28 Sn 2 SbS 2 I 3 also showed an electron mobility of 3.22 3 10 À2 cm 2 V À1 S À1 , and the corresponding electron diffusion length was 82.8 nm (Figures S6 and S7). It should be considered that these physical values were measured with relatively impure and non-compact Sn 2 SbS 2 I 3 thin films obtained using a solution process (Figure S8).…”

“…Dolgikhv 27 reported the preparation of an isostructural Pb 2 SbS 2 I 3 compound and investigated its dielectric properties, especially its high-frequency permittivity. Starosta et al 28 prepared Sn 2 SbS 2 I 3 and Pb 2 SbS 2 I 3 using a modified Bridgman method, and they found that the band gaps of Sn 2 SbS 2 I 3 and Pb 2 SbS 2 I 3 are 1.5 and 2.0 eV, respectively. Although Sn 2 SbS 2 I 3 exhibits important semiconducting properties and an acceptable band gap, it has not been applied in solar cells.…”