Preparation and electrical properties of ε-Ti2N thin films

Abstract

An ε-Ti2N film nearly free from any other phase of the Ti-N compound was deposited and the temperature dependencies of the resistivity and the Hall coefficient of the film were measured. The resistivity data were analyzed in terms of the Bloch–Grüneisen equation. The characteristic temperature θ of the film was 410.8 K, independent of the temperature ranging from 4.2 to 300 K. From a Hall measurement it was determined that the conduction carriers in the ε-Ti2N were holelike over the temperature range from 77 to 300 K.

Characterization and in-situ monitoring of sub-stoichiometric adjustable superconducting critical temperature titanium nitride growth

“…This implies that there is an increased number of carriers as the films become more metallic. This result is consistent with the XRD and phase diagram results as Ti 2 N [19] is also a metal, with a higher conductivity and carrier density than TiN.…”

Investigation of Ti/Au and Ti2N/Ti/Au ohmic contacts to n-GaN films

“…It is not surprising to observe that the GaN/Ti 2 N/Ti/Au structure forms ohmic contacts. It has been reported that the sputter deposited Ti 2 N films show metallic behavior with ∼6 × 10 −4 cm resistivity [12] and the TiN films form ohmic contacts with n-type GaN [5]. It was also reported that the insertion of a thin Ti layer between TiN and GaN lowered the resistivity of the GaN/TiN contact [13].…”

Growth, surface morphology, optical properties and electrical resistivity of ɛ-TiNx (0.4<x≤0.5) films

“…When N is added to Ti, Ti transforms from the hexagonal closed packed (hcp) phase to the tetragonal e-Ti 2 N phase, and finally to the fcc d-TiN phase. There are several theories for the formation and stability of the Ti 2 N phase [17,18]. According to Igasaki et al [17], the Ti-N compound exists as a distorted a phase of a solid solution Ti-N x in the range of x 0.2, where nitrogen atoms occupy the interstitial octahedral sites in a random manner.…”

“…There are several theories for the formation and stability of the Ti 2 N phase [17,18]. According to Igasaki et al [17], the Ti-N compound exists as a distorted a phase of a solid solution Ti-N x in the range of x 0.2, where nitrogen atoms occupy the interstitial octahedral sites in a random manner. At higher values of x, 0.2 < x < 0.49, a two-phase compound comprising the a-Ti-N x and e-Ti 2 N is formed, and over a relatively narrow range, 0.49 x 0.52, the e-Ti 2 N is stable and phase pure.…”