Growth, surface morphology, optical properties and electrical resistivity of ɛ-TiNx (0.4&lt;x≤0.5) films

Kiran, M. S. R. N.; Krishna, M. Ghanashyam; Padmanabhan, K. A.

doi:10.1016/j.apsusc.2008.06.122

Cited by 38 publications

(14 citation statements)

References 25 publications

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“…[18] The metallic behavior of TiNx is due to the intersection of the Ti 3d electron's valence band with the Fermi level. [19] Figure 5 presents the resistivity values versus atomic percent of nitrogen for the analyzed samples. From this curve, it may be observed that the films with maximum nitrogen concentration present the minimum values of resistivity and that, on the other hand, the resistivity increases progressively as the nitrogen content decreases.…”

Section: Resistivitymentioning

confidence: 99%

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Saoula¹,

Djerourou²,

Yahiaoui³

et al. 2010

Surface & Interface Analysis

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In this study, we present the effect of the plasma deposition parameters on the electrical and structural properties of Ti/TiN multilayers. The films were formed by r.f. magnetron sputtering (13.56 MHz) under nitrogen and argon reactive plasma at low pressure. The first step of our study was the optimization of the deposition conditions in order to obtain good-quality films. The total pressure was set between 2 and 10 mTorr. The primary result is that the self-bias voltage plays a major role in the structural evolution of TiN films by changing the preferred film orientation and their hardness. The variation of the resistivity as the function of substrate bias was also investigated. The deposited multilayers were characterized by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and Raman scattering analysis, as well as by the standard four-probe technique.

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Section: Resistivitymentioning

confidence: 99%

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Saoula¹,

Djerourou²,

Yahiaoui³

et al. 2010

Surface & Interface Analysis

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“…The nonappearance of the ε-Ti 2 N phase in our TiN films may be due to the quite low ratio T s / T m ≈ 0.03 (substrate temperature T s ≈ 100 °C; melting temperature T m ≈ 2949 °C). This assumption is supported by the experiments described by Kiran et al [3]. In [3], TiN x layers with 0.4 < x ≤ 0.5 were deposited at T s ≈ 80 °C with RF magnetron sputtering.…”

Section: Resultsmentioning

confidence: 68%

“…In such applications, phenomena such as cracking, wear and corrosion, among others, depend essentially on surface and subsurface features, e.g., microstructure, stress distribution, elastic discontinuities, defects and chemical composition [3-8]. …”

Section: Introductionmentioning

confidence: 99%

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

2009

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Ultrasonic force microscopy has been applied to the characterization of titanium nitride coatings deposited by physical vapor deposition dc magnetron sputtering on stainless steel substrates. The titanium nitride layers exhibit a rich variety of elastic contrast in the ultrasonic force microscopy images. Nanoscale inhomogeneities in stiffness on the titanium nitride films have been attributed to softer substoichiometric titanium nitride species and/or trapped subsurface gas. The results show that increasing the sputtering power at the Ti cathode increases the elastic homogeneity of the titanium nitride layers on the nanometer scale. Ultrasonic force microscopy elastic mapping on titanium nitride layers demonstrates the capability of the technique to provide information of high value for the engineering of improved coatings.

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“…The optical bandgap value for (1 1 1) oriented ZnTe films exhibited 2.6, 1.9 and 1.33 eV for the films shown in Figures 2a-2c, respectively. It is evident that the increase in thickness leads to a decrease in optical absorption edge/bandgap, as observed in oxides and nitrides earlier [35,36]. Defects in thin films originate during the formation of the films, thus unsaturated bonds can be produced as a result of an insufficient number of atoms being present.…”

Section: Resultsmentioning

confidence: 95%

Structural, optical and nanomechanical properties of (1 1 1) oriented nanocrystalline ZnTe thin films

Kiran

Kshirsagar

Krishna

et al. 2010

Eur. Phys. J. Appl. Phys.

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Abstract. Structural, optical and nanomechanical properties of nanocrystalline Zinc Telluride (ZnTe) films of thickness upto 10 microns deposited at room temperature on borosilicate glass substrates are reported. X-ray diffraction patterns reveal that the films were preferentially oriented along the (1 1 1) direction. The maximum refractive index of the films was 2.74 at a wavelength of 2000 nm. The optical band gap showed strong thickness dependence. The average film hardness and Young's modulus obtained from loaddisplacement curves and analyzed by Oliver-Pharr method were 4 and 70 GPa respectively. Hardness of (1 1 1) oriented ZnTe thin films exhibited almost 5 times higher value than bulk. The studies show clearly that the hardness increases with decreasing indentation size, for indents between 30 and 300 nm in depth indicating the existence of indentation size effect. The coefficient of friction for these films as obtained from the nanoscratch test was ∼0.4.

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Growth, surface morphology, optical properties and electrical resistivity of ɛ-TiNx (0.4<x≤0.5) films

Cited by 38 publications

References 25 publications

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

Structural, optical and nanomechanical properties of (1 1 1) oriented nanocrystalline ZnTe thin films

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