Preparation and characterization of tin diselenide thin film by spray pyrolysis technique

Amalraj, L.; Jayachandran, M.; Sanjeeviraja, C.

doi:10.1016/j.materresbull.2004.08.006

Cited by 34 publications

(10 citation statements)

References 20 publications

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“…Although in the previous work the similar XRD patterns of two-dimensional SnSe 2 nanoplates are generally indexed to the crystal structure of space group P 3 ml (a = 3.81 Å and c = 6.14 Å), whose XRD patterns are actually like PDF#01-089-3197 [19,24,27,31,35,36], it is obvious that in this work the patterns of SnSe 2 bulk materials can match PDF#00-038-1055 well. Amalraj et al [18] got the same conclusion. However, the data of PDF#01-038-1055 is incomplete in respect of the lattice parameters.…”

Section: Resultsmentioning

confidence: 60%

“…Particularly, the IV-VI layered SnSe compound is reported to have the maximum zT of 2.0 at 773 K along the b-axis in hole doped SnSe single crystals [13] and 0.8 for 2 at% Na-doped SnSe p-type polycrystalline samples [14]. Similar to SnSe, SnSe 2 is also a layered semiconductor material and widely used in nanoelectronics and optoelectronics fields [15][16][17][18][19]. A question naturally arises, that is, there a good TE performance for SnSe 2 ?…”

Section: Introductionmentioning

confidence: 99%

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Anisotropic thermoelectric properties of layered compound SnSe 2

Xin

et al. 2017

Science Bulletin

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Section: Resultsmentioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Anisotropic thermoelectric properties of layered compound SnSe 2

Xin

et al. 2017

Science Bulletin

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“…SnSe 2 thin films have been prepared by spin coating 20,21 , spray pyrolysis 14,22,23 , chemical vapour deposition(CVD) 15,18 , molecular beam epitaxy 10 , thermal evaporation of Sn and Se elements 24 , and sputtering 25 . Here, we deposited Sn films of various thicknesses on soda lime glass (SLG) substrate and annealed the films in selenium atmosphere for 1 h at 450 °C to obtain hexagonal SnSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

Mukhokosi

Krupanidhi

2017

Sci Rep

114

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We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV similar to that of bulk for the 1200 nm thick film. The variation of the band gap is consistent with the the theoretically predicted layer-dependent band gap of SnSe2. Interestingly, the 400–1200 nm thick films were sensitiveto 1064 nm laser iradiation and the sensitivity increases almost exponentiallly with thickness, while films with 50–140 nm thick are insensitive which is due to the fact that the band gap of thinner films is greater than the energy corresponding to 1064 nm. Over all, our results establish the possibility of engineering the band gap of SnSe2 layered structures by simply controlling the thickness of the film to absorb a wide range of electromagnetic radiation from infra-red to visible range.

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“…Reports on the growth of layered SnSe 2 films on a variety of layered substrates using van der Waals epitaxy can be found on literature 34 . Other methods showed to be able to synthesize SnSe 2 thin layers such as spray pyrolysis 22,35 , pulsed laser deposition 36 and chemical vapor deposition 29 .…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

et al. 2013

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In this work, tin selenide thin films (SnSe x ) were grown on soda lime glass substrates by selenization of dc magnetron sputtered Sn metallic precursors. Selenization was performed at maximum temperatures in the range of 300 • C to 570 • C. The thickness and the composition of the films were analysed using step profilometry and energy dispersive spectroscopy, respectively. The films were structurally and optically investigated by X-Ray diffraction, Raman spectroscopy and optical transmittance and reflectance measurements. X-Ray diffraction patterns suggest that for temperatures between 300 • C and 470 • C the films are composed of hexagonal-SnSe 2 phase. By increasing the temperature, the films selenized at maximum temperatures of 530 • C and 570 • C show orthorhombic-SnSe as the dominant phase with a preferential crystal orientation along the (400) crystallographic plane. Raman scattering analysis allowed the assignment of peaks at 119 cm −1 and 185 cm −1 to the hexagonal-SnSe 2 and 108 cm −1 , 130 cm −1 and 150 cm −1 to the orthorhombic-SnSe phase. All samples present traces of condensed amorphous Se with a characteristic Raman peak located at 255 cm −1 . From optical measurements, the estimated band gap energies for hexagonal-SnSe 2 were close to 0.9 eV and 1.7 eV for indirect forbidden and direct transitions, respectively. The samples with the dominant orthorhombicSnSe phase presented estimated band gap energies of 0.95 eV and 1.15 eV for indirect allowed and direct allowed transitions, respectively.

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Preparation and characterization of tin diselenide thin film by spray pyrolysis technique

Cited by 34 publications

References 20 publications

Anisotropic thermoelectric properties of layered compound SnSe 2

Anisotropic thermoelectric properties of layered compound SnSe 2

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

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