Preparation and Characterization of Straight and Zigzag AlN Nanowires

Duan, Junhong; Yang, Shaoguang; Hw, Liu; Gong, Jiangbin; Huang, Hong; Xn, Zhao; Zhang, R; Yw, Du

doi:10.1021/jp044569o

Cited by 43 publications

(27 citation statements)

References 19 publications

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“…Two well-established growth mechanisms for 1D AlN nanostructures are vapor-solid (VS) and metal-catalyst-assisted vapor-liquid-solid (VLS) model [15][16][17]19]. In the VS process, a vapor species generated from evaporation or chemical reaction is transported and condensed onto a substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Consequently, 1D AlN nanostructures are of fresh interest at present due to its promising application in optoelectronic and fieldemission nanodevice [11,12]. Very recently, several routes have been developed to prepare 1D AlN nanowires, such as carbon nanotubes confined reaction [13], confined method of anodic porous aluminum template [14], extended vapor-liquid-solid growth technique [15] and direct reaction of Al or Al alloy in a mixture of nitrogen and ammonia gas (N 2 + NH 3 ) [16,17]. All these method, the flowing NH 3 was employed as necessary nitrogen source and a crucial condition for synthesis of AlN nanowires.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

Shen

Cheng

et al. 2008

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

Shen

Cheng

et al. 2008

Journal of Alloys and Compounds

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“…In addition, technological advances led to the emergence of novel low-dimensional forms of III-V binary compounds. Experimental fabrication of AlN nanowires [7][8][9][10], nanobelts [11][12][13], and nanodots [14,15] has already been reported. In recent years, theoretical and experimental studies of graphene [16] provided a wide range of knowledge for a new class of materials, and they opened up possibilities for the synthesis of many similar structures, such as silicene [17][18][19][20], germanene [20][21][22][23], transition-metal dichalcogenides (TMDs) [24][25][26][27][28][29][30][31], and hexagonal structures of III-V binary compounds (e.g., h-BN, h-AlN) [32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

et al. 2015

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Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013)], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm −1 and an E g mode at 703 cm −1 , which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA -type stacking is found to be the most favorable one, and interlayer interaction is strong. While N -layered h-AlN is an indirect-band-gap semiconductor for N = 1 − 9, we predict that thicker structures (N 10) have a direct band gap at the point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.

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“…Furthermore, its wide band gap and adjustable band offsets are an attractive feature for devices relying on quantum confinement and tunneling transport [12,13]. Recently, one dimensional (1D) AlN nanostructures have been under active investigations because of their unique property that is not present in the bulk and potential application in building nanodevices [14][15][16][17][18][19][20]. Enormous progress has been achieved in the synthesis and characterization of these 1D AlN systems.…”

Section: Introductionmentioning

confidence: 99%

Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

Qin

Shang

Wang

et al. 2015

Sci. China Technol. Sci.

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The effects of Mg doping (Mg Al ) and native N vacancy (V N ) on the electronic structures and transport properties of AlN nanowire (AlNNW) were theoretically investigated by using density functional theory. Either the Mg Al defect or the V N defect prefers to be formed on the AlNNW surfaces. Both Mg Al and V N defects could increase the conductivity owing to introducing a defect band inside the band gap of AlN and split the AlN band gap into two subgaps. The defect concentration has little influence on the magnitude of the subgaps. The Mg Al serves as a shallow acceptor rendering the nanowire a p-type conductor. The V N introduces a deep donor state enabling the nanowire an n-type conductor. The Mg Al systems exhibit higher conductivity than the V N ones owing to the narrow subgaps of Mg Al systems. The conductivity is roughly proportional to the defect concentration in the Mg Al and V N defect systems. When the Mg Al and V N coexist, the hole state of the Mg Al defect and the electron state of the V N defect will compensate each other and their coupling state appears just above the valence-band maximum leading to a little decrease of the band gap compared with the pure AlNNW, which is unfavorable for the enhancing of the conductivity.N vacancy, Mg doping, electronic property, transport property, AlN nanowire Citation:Qin M, Shang Y, Zhang G L. Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires.

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Preparation and Characterization of Straight and Zigzag AlN Nanowires

Cited by 43 publications

References 19 publications

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

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