Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

Abstract

The effects of Mg doping (Mg Al ) and native N vacancy (V N ) on the electronic structures and transport properties of AlN nanowire (AlNNW) were theoretically investigated by using density functional theory. Either the Mg Al defect or the V N defect prefers to be formed on the AlNNW surfaces. Both Mg Al and V N defects could increase the conductivity owing to introducing a defect band inside the band gap of AlN and split the AlN band gap into two subgaps. The defect concentration has little influence on the magnitude of the subgaps. The Mg Al serves as a shallow acceptor rendering the nanowire a p-type conductor. The V N introduces a deep donor state enabling the nanowire an n-type conductor. The Mg Al systems exhibit higher conductivity than the V N ones owing to the narrow subgaps of Mg Al systems. The conductivity is roughly proportional to the defect concentration in the Mg Al and V N defect systems. When the Mg Al and V N coexist, the hole state of the Mg Al defect and the electron state of the V N defect will compensate each other and their coupling state appears just above the valence-band maximum leading to a little decrease of the band gap compared with the pure AlNNW, which is unfavorable for the enhancing of the conductivity.N vacancy, Mg doping, electronic property, transport property, AlN nanowire Citation:Qin M, Shang Y, Zhang G L. Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires.

Mechanisms during Strain Rate-Dependent Crack Propagation of Copper Nanowires Containing Edge Cracks

“…Metal nanowires are expected to play an important role in future nanoscale mechanical, optical, and electrical devices due to their unique structure, properties, and the great potential they show in a variety of applications such as molecular electronics and nanoelectromechanical systems (NEMS) [ 1 , 2 ]. In recent years, various nanodevices have been developed from nanowires, such as nano-laser [ 3 , 4 ] and quantized conductance atomic switches [ 5 ].…”

Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

“…7 Previously, the growth/synthesis of Mg-doped AlN nanowires using various techniques, including direct arc discharge method, metal organic chemical vapor deposition (MOCVD), and molecular beam epitaxy (MBE), have been reported. [8][9][10][11][12][13][14] These studies, however, mostly focus on the magnetic properties of Mgdoped AlN nanowires. In addition, such Mg-doped AlN nanowires exhibit poor optical qualities, and band-edge emission was not measured at room temperature.…”