Preparation and characterization of sputtered aluminum and gallium co-doped ZnO films as conductive substrates in dye-sensitized solar cells

Onwona-Agyeman, B.; Nakao, Motoi; Kohno, Takeshi; Liyanage, Devinda; Murakami, Kenji; Kitaoka, Takuya

doi:10.1016/j.cej.2013.01.006

Cited by 23 publications

(4 citation statements)

References 20 publications

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“…[39][40][41] However, the high reactivity of aluminium may lead to unwanted side reactions during film growth. 42 Conversely, gallium is a relatively stable dopant element, which means the potential for unwanted side reactions is lower compared to other dopants. [43][44][45] Nomoto et al found that, when exposed to 85% humidity at 85 1C for 1000 hours, the resistivity of GZO films were more stable in comparison to AZO films.…”

Section: Introductionmentioning

confidence: 99%

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

et al. 2018

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“…They are usually used for a low-e window, in organic light-emitting diodes, solar cells, etc. [8][9][10][11]. Several TCOs, such as indium tin oxide (ITO) and zinc oxide (ZnO), have been intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Chang

Chan

et al. 2022

Coatings

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Low-emissivity glass has high transmission in the visible region and high reflectivity in the infrared region. Gallium and aluminum codoped zinc oxide (GAZO) processed by hydrogen (H2) plasma treatment holds promise for fabricating good low-emissivity glass. The applied processing time is one of the key factors in plasma treatment. The GAZO films were prepared by in-line sputtering at room temperature, and the effect of using different plasma processing times on the structural, electrical and optical properties of the films were surveyed. Experimental results indicate that H2 plasma treatment of GAZO film samples indeed influenced the structure, optical and electrical properties. An appropriate processing time can improve the electrical properties and reduce the emissivity of GAZO films. The optimum processing time is 5 min for plasma treatment of GAZO films. The electrical resistivity and emissivity of plasma-annealed films for 5 min decrease by 59% and 55% compared to those of as-deposited GAZO films. Values of 5.3 × 10−4 Ω-cm in electrical resistivity, 0.13 in emissivity and 94% in average optical transmittance in the visible wavelength region could be obtained for GAZO films after H2 treatment of 5 min in this work for low-emissivity glass applications.

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“…Zinc oxide (ZnO) films underpin the development of solar cells [ 1 , 2 ], gas sensor applications [ 3 , 4 , 5 ], displays [ 6 , 7 , 8 ], and optoelectronic components [ 9 , 10 , 11 ]; moreover, they can function both as electrodes and as front windows owing to their semiconducting properties and wide band gap. Most of the current studies focus on crystalline ZnO films prepared on a glass substrate.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Chemical Effects of Amorphous Zinc Oxide/Graphene

Zhao

Fang

et al. 2021

Materials

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Research on the preparation and performance of graphene composite materials has become a hotspot due to the excellent electrical and mechanical properties of graphene. Among such composite materials, zinc oxide/graphene (ZnO/graphene) composite films are an active research topic. Therefore, in this study, we used the vacuum thermal evaporation technique at different evaporation voltages to fabricate an amorphous ZnO/graphene composite film on a flexible polyethylene terephthalate (PET). The amorphous ZnO/graphene composite film inherited the great transparency of the graphene within the visible spectrum. Moreover, its electrical properties were better than those of pure ZnO but less than those of graphene, which is not consistent with the original theoretical research (wherein the performance of the composite films was better than that of ZnO film and slightly lower than that of graphene). For example, the bulk free charge carrier concentrations of the composite films (0.13, 1.36, and 0.47 × 1018 cm−3 corresponding to composite films with thicknesses of 40, 75, and 160 nm) were remarkably lower than that of the bare graphene (964 × 1018 cm−3) and better than that of the ZnO (0.10 × 1018 cm−3). The underlying mechanism for the abnormal electrical performance was further demonstrated by X-ray photoelectron spectroscopy (XPS) detection and first-principles calculations. The analysis found that chemical bonds were formed between the oxide (O) of amorphous ZnO and the carbon (C) of graphene and that the transfer of the π electrons was restricted by C=O and C-O-C bonds. Given the above, this study further clarifies the mechanism affecting the photoelectric properties of amorphous composite films.

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Preparation and characterization of sputtered aluminum and gallium co-doped ZnO films as conductive substrates in dye-sensitized solar cells

Cited by 23 publications

References 20 publications

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Interfacial Chemical Effects of Amorphous Zinc Oxide/Graphene

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