Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Abstract

Low-emissivity glass has high transmission in the visible region and high reflectivity in the infrared region. Gallium and aluminum codoped zinc oxide (GAZO) processed by hydrogen (H2) plasma treatment holds promise for fabricating good low-emissivity glass. The applied processing time is one of the key factors in plasma treatment. The GAZO films were prepared by in-line sputtering at room temperature, and the effect of using different plasma processing times on the structural, electrical and optical properties of the films were surveyed. Experimental results indicate that H2 plasma treatment of GAZO film samples indeed influenced the structure, optical and electrical properties. An appropriate processing time can improve the electrical properties and reduce the emissivity of GAZO films. The optimum processing time is 5 min for plasma treatment of GAZO films. The electrical resistivity and emissivity of plasma-annealed films for 5 min decrease by 59% and 55% compared to those of as-deposited GAZO films. Values of 5.3 × 10−4 Ω-cm in electrical resistivity, 0.13 in emissivity and 94% in average optical transmittance in the visible wavelength region could be obtained for GAZO films after H2 treatment of 5 min in this work for low-emissivity glass applications.

Effect of Hydrogen Plasma Treatment on the Sensitivity of ZnO Based Electrochemical Non-Enzymatic Biosensor

“…The thermal treatment and hydrogen plasma treatment of zinc oxide semiconductor materials are common methods for changing their physicochemical properties [ 40 , 41 , 42 ]. Negatively charged oxygen forms adsorbed on the ZnO grain boundaries play the role of electron capture centers and form potential energy barriers, thereby reducing the Hall mobility and concentration of free carriers.…”