Preparation and characterization of sprayed In₂O₃:Mo films

Abstract

Transparent conducting oxides (TCO) play a major role in the area of thin film photovoltaics, flat panel displays, organic light emitting diodes and other optoelectronic devices. In order to improve the performance of a device, the TCO should have good optical transmittance as well as conductivity. In the present study, In2O3:Mo films have been grown by an economic and simple spray pyrolysis method with different molybdenum doping concentrations that vary in the range, 0–12 at% at a substrate temperature of 400 °C. The structural and morphological, electrical and optical behaviour of the as‐grown layers were studied. All the deposited layers showed a body‐centered cubic structure with a strong (222) orientation. In2O3:Mo films grown with Mo‐concentration of 6.0 at% had the maximum grain size of 90 nm. The average optical transmittance of the films was >85% in the visible region. The change of grain size, electrical resistivity, carrier mobility and density, optical band gap and figure of merit with doping concentration was reported and discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Structural and opto-electronic properties of transparent conducting (222)-textured Zr-doped In2O3/ZnO bilayer films

“…The T is the transmittance at specific wavelength and R sh is the sheet resistance of the film. [29,30]. The Zr-In 2 O 3 Zr-In 2 O 3 /ZnO bilayer on a glass substrate with moderately controlled Zr-In 2 O 3 film thickness has a promising future for use in transparent contact layers.…”

Transparent Conducting Oxides—An Up-To-Date Overview

“…Mo is a dopant for ZnO (MZO) or In 2 O 3 (IMO). MoO is also applied in layer stacks with silver, Ag [210,211,212]. …”

Effect of tantalum doping on the structural and optical properties of RF magnetron sputtered indium oxide thin films

“…Among the TCO films, indium oxide has attracted much interest in the optoelectronic industry owing to their high optical transparency in the visible and near infra-red region, good adherence to the substrate surface and high chemical inertness [1]. Indium oxide is an n-type semiconductor with band gap energy 3.5-3.75 eV [2] and usually possesses a cubic bixbyite structure with lattice parameter a¼ b¼c ¼10.118 Å.…”