Preparation and characterization of sol–gel derived (100)-textured Pb(Zr,Ti)O3 thin films: PbO seeding role in the formation of preferential orientation

Gong, Wen; Li, Jing‐Feng; Chu, Xiangcheng; Gui, Zhilun; Li, Longtu

doi:10.1016/j.actamat.2004.02.025

Cited by 124 publications

(69 citation statements)

References 34 publications

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“…This sharp MPB is a consequence of a subtle balance between local chemical heterogeneity and long-range electrostatic interactions [2], and its exact mechanism is a subject of long-standing fundamental interest [3][4][5][6]. Such a MPB is also critical for the technological applications of PZT materials because PZT at MPBs is much easier to pole and exhibits excellent piezoelectric property compared to its rhombohedral and tetragonal counterparts [7,8]. Therefore, the significance of the MPB in PZT cannot be overemphasized, and its existence and implications are under extensive investigation.…”

Section: Introductionmentioning

confidence: 97%

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Zhu

Liu

et al. 2009

Acta Materialia

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Section: Introductionmentioning

confidence: 97%

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Zhu

Liu

et al. 2009

Acta Materialia

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“…Although the D-V butterfly curves of all of the PCT thin films possessed good shape, the maximum displacement (D) of the PCT thin film annealed at 500 1C (40 Å at 30 V) was higher than those of the films annealed at 450 1C (D ¼ 27.5 Å) and 550 1C (D ¼ 25 Å), and twice that of the film annealed at 600 1C (D ¼ 20 Å). These enhanced piezoelectric properties may have been due to the high orientation [14][15][16] and clear interface with no serious interfacial diffusion between the film and substrate. Notably, the low crystallization temperature not only enhanced the piezoelectric properties, but also improved the integration of the film with the Si-substrate, which will be of significant benefit to the fabrication of electronic devices.…”

Section: Resultsmentioning

confidence: 96%

Enhanced piezoelectric properties of Pb0.8Ca0.2TiO3 thin films prepared at low temperature by a sol–gel process

Zhang

Chen

2015

Ceramics International

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“…PbO, ZrO 2 and TiO 2 are interesting materials by themselves and each of them has their applications in different fields. In the presented work, these oxides are of particular interest due to the factor that they are relative compounds of PZT and therefore could be promising candidates for the integration of PZT and GaN, as they have been used in the literatures as the buffer layer for PZT growth 41 , 42 , 43 . We present a study of PbO, TiO 2 and ZrO 2 grown by molecular beam epitaxy (MBE) as candidates for bridge layers for the integration of PZT with GaN.…”

Section: Experimental Details For Zromentioning

confidence: 99%

Synthesis of Multifunctional Materials

Morkoç¹

2006

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintainin_ the data needed, and completing and reviewing this collection of Information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and Single-crystal PbTiO 3 layers were grown on (001) SrTiO 3 substrates by molecular beam epitaxy using hydrogen peroxide as an oxidant. Phase composition and structural properties of the films were examined as a function of growth parameters. It was found that single-phase PbTiO 3 films grew epitaxially at substrate temperatures of 600'C and higher, whereas layers grown at lower temperature contained PbO inclusions.Growth of Pb(ZrxTi 1 ..)0 3 (PZT) films by molecular beam epitaxy was demonstrated for the first time. Single-crystal, single-phase PZT films were grown on (001) SrTiO 3 substrates at a growth temperature of 600'C. In situ monitoring of the growth process by reflection high-energy electron diffraction revealed two dimensional growth mode for the end compounds of the PZT system, PbTiO 3 and PbZrO 3 , and three-dimensional growth mode for PZT films of intermediate compositions.Epitaxial growth of PbO, TiO 2 and ZrO 2 has been achieved on MOCVD grown GaN template using oxides MBE with a reactive H 2 0 2 oxygen source. In situ RHEED was used to monitor the growth in-situ. AFM was used to characterize the surface morphology of the thin PbO and ZrO 2 , which show streaky, 2-D RHEED patterns.We have made substantial progress in the growth and characterization of PTO and PZT and also on ZrO 2 which turned out to be a very good oxide bridge layer to GaN. 20061226006ABSTRACT Single-crystal PbTiO 3 layers were grown on (001) SrTiO 3 substrates by molecular beam epitaxy using hydrogen peroxide as an oxidant. Phase composition and structural properties of the films were examined as a function of growth parameters. It was found that single-phase PbTiO 3 films grew epitaxially at substrate temperatures of 600'C and higher, whereas layers grown at lower temperature contained PbO inclusions. The epitaxial relationship between the films and the substrates was (001)PbTiO 3 //(001)SrTiO 3 and PbTiO 3 [100]//SrTiO 3 [100]. No evidence of a-domains was found. Full widths at half maximum of (001) PbTiO 3 rocking curves were as low as 6-8 arcmin for 50-60 nm thick films, indicating high crystal quality of the films. From ellipsometric measurements, refractive index and band gap of PbTiO 3 were found to be 2.66 at 633 nm and 3.8 eV, respectively.

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Preparation and characterization of sol–gel derived (100)-textured Pb(Zr,Ti)O3 thin films: PbO seeding role in the formation of preferential orientation

Cited by 124 publications

References 34 publications

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Enhanced piezoelectric properties of Pb0.8Ca0.2TiO3 thin films prepared at low temperature by a sol–gel process

Synthesis of Multifunctional Materials

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