Preparation and characterization of Ni–Mn–Ga high temperature shape memory alloy thin films using rf magnetron sputtering method

Liu, C.; Cai, Wei; An, Xizhong; Gao, Laixu; Gao, Zhiyong; Zhao, Liancheng

doi:10.1016/j.msea.2006.01.115

Cited by 14 publications

(9 citation statements)

References 12 publications

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“…Tuning the composition of Ni-Mn-Ga films has been achieved by means of various techniques like changing the target composition [3], the deposition temperature [4], the sputtering reactor pressure [20] or applying a negative bias voltage on the substrate [21].…”

Section: Introductionmentioning

confidence: 99%

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni–Mn–Ga films by co-sputtering

Tillier¹,

Bourgault²,

Odier³

et al. 2011

Acta Materialia

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In order to obtain modulated martensite in our epitaxial Ni-Mn-Ga films, we tuned the composition by using a co-sputtering process.Here we present how the composition affects the variant distribution of the 14-modulated martensite at room temperature. The nature of such modulated martensites is still strongly debated for magnetic shape memory alloys. It has been very recently demonstrated that the modulated martensites in Ni-Mn-Ga are adaptive phases. The results presented here corroborate this theory for the first time, for three different compositions. Moreover, we demonstrate with the help of the adaptive modulations theory that b-variants of the 14-modulated martensite form close to the free surface of the film to release the stress induced by branching of macro-twinned domains during the martensitic transformation on a rigid substrate. At room temperature, the content of such b-variants is found to strongly decrease when the macro-twinned domain sizes increase.

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Section: Introductionmentioning

confidence: 99%

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni–Mn–Ga films by co-sputtering

Tillier¹,

Bourgault²,

Odier³

et al. 2011

Acta Materialia

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“…The composition of the Ni-Mn-Ga thin film is Ni 48.8 Mn 27.2 Ga 24 . In order to determine the martensitic transformation temperature, DSC is attempted but no evident phase transformation peaks are detected due to a low thermal enthalpy and small mass (~1 mg) of thin film peeled off from the substrate [ 9 ]. To further determine the phases, the representative XRD pattern of the Ni 48.8 Mn 27.2 Ga 24 thin film annealed at 823 K for 1 hour is depicted in Figure 1 .…”

Section: Resultsmentioning

confidence: 99%

Nanoscale Mechanical Properties of Nanoindented Ni_48.8Mn_27.2Ga₂₄ Ferromagnetic Shape Memory Thin Film

Liu

et al. 2017

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The structure and nanoscale mechanical properties of Ni48.8Mn27.2Ga24 thin film fabricated by DC magnetron sputtering are investigated systematically. The thin film has the austenite state at room temperature with the L21 Hesuler structure. During nanoindentation, stress-induced martensitic transformation occurs on the nanoscale for the film annealed at 823 K for 1 hour and the shape recovery ratio is up to 85.3%. The associated mechanism is discussed.

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“…Sputtering process has been proved to be an efficient technique to deposit reproducible epitaxial films on various substrates. Tailoring the composition has been realized by using different techniques like changing the target composition [10], the deposition temperature [11], the sputtering reactor pressure [15] or applying a negative bias voltage on the substrate [16]. Varying the target composition is a quite simple route but preferential sputtering of Ni atoms occurs during the process [17].…”

Section: Introductionmentioning

confidence: 99%

Martensite structures and twinning in substrate-constrained epitaxial Ni–Mn–Ga films deposited by a magnetron co-sputtering process

et al. 2010

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In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes.

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Preparation and characterization of Ni–Mn–Ga high temperature shape memory alloy thin films using rf magnetron sputtering method

Cited by 14 publications

References 12 publications

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni–Mn–Ga films by co-sputtering

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni–Mn–Ga films by co-sputtering

Nanoscale Mechanical Properties of Nanoindented Ni_48.8Mn_27.2Ga₂₄ Ferromagnetic Shape Memory Thin Film

Martensite structures and twinning in substrate-constrained epitaxial Ni–Mn–Ga films deposited by a magnetron co-sputtering process

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Preparation and characterization of Ni–Mn–Ga high temperature shape memory alloy thin films using rf magnetron sputtering method

Cited by 14 publications

References 12 publications

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni–Mn–Ga films by co-sputtering

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni–Mn–Ga films by co-sputtering

Nanoscale Mechanical Properties of Nanoindented Ni48.8Mn27.2Ga24 Ferromagnetic Shape Memory Thin Film

Martensite structures and twinning in substrate-constrained epitaxial Ni–Mn–Ga films deposited by a magnetron co-sputtering process

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Nanoscale Mechanical Properties of Nanoindented Ni_48.8Mn_27.2Ga₂₄ Ferromagnetic Shape Memory Thin Film