Preparation and characterization of CuInSe2 nano-particles

Crystallite formation mechanism of CuIn(Se,S)2 synthesized using solvothermal method

“…[12][13][14] However, this synthesis is difficult to scale up because the reagents used are toxic and expensive and the processing process is complicated. CISS and CIS nanocrystals have also been reported successfully synthesized using hydrothermal [15,16] and solvothermal [17][18][19][20] methods. However, it is difficult to obtain a single CIS phase and the required reaction time for preparing single-phased CIS powders through the conventional hydrothermal and solvothermal methods require a long processing time (above 15 h) [21].…”

“…In the previous studies, ethylenediamine was selected as the solvent in the solvothermal process due to its low viscosity, low boiling point (117 1C), strong basic capacity, strong chelation and its ability to dissolve Cu(NO 3 ) 2 and elemental selenium to form Cu (C 2 H 8 N 2 ) 2 þ and Se(C 2 H 8 N 2 ) x complexes. Xiao and Lu [17,18] observed that CuInS 2 (CIS) can be obtained using copper chloride, indium chloride and elemental selenium as the raw materials with ethylenediamine as a the solvent at 180 1C for 15 h. Chen et al [19] found that for the solvothermal reaction at 200 o C using ethylenediamine as the solvent, a secondary indium selenide binary compound phase was produced with reaction time less than 12 h. Only as the reaction time was more than 15 h, could a single CIS phase be obtained. To overcome these difficulties, a novel solvotherml synthesis of CuIn(S 1À x Se x ) 2 (CISS) crystals using low cost and low toxic reagents at 200 1C for 3 h was developed in this study.…”

Copper-indium-gallium-diselenide nanoparticles synthesized by a solvothermal method for solar cell application

“…Philip Jackson et al [4] reported that the optimal ratios were approximately 0.3 and 0.80-0.92 for Ga/(In+Ga) and Cu/(In+Ga), respectively. A constant heating temperature of 200 for 36h was considered optimal for the samples since the resulting mole ratios were 0.29 for Ga/(In+Ga) and 0.90 for Cu/(In+Ga).…”

“…As to the series resistance of device, it is 100 times larger than the series resistance of the high efficiency solar cells [5] which results in the softness in the knee of I V curve and the degradation of FF and values. Considering the high resistance resulting from reduce the thick layer of MoSe2 [4], it is reasonable to assume that the cell efficiency could be improved by a thicker Mo layer. …”

“…Many researchers have, thus, recently tried to fabricate various types of absorbers for thin-film photovoltaics using relatively simple procedures, which will make semiconductor preparation more cost-effective. The creation of diverse morphologies in different chalcogenide semiconductors has been accomplished via several methods, including solvothermal routes [4], spray pyrolysis [5], electrochemical deposition [6], sol-gel methods [7], chemical bath deposition [8] and the hot injection method [9]. The ink is made from low-cost commercially available precursors with relatively low toxicity, and the fast blading process can deposit uniform layers over large areas.…”