Preparation and characterization of co-evaporated a-GaAs films

Low temperature annealing of amorphous gallium arsenide films

“…This increase of the optical gap also was observed by Th e eye et al [20] and Kotkata et al [21]. Based on the defect model proposed by O'Reilly and Robertson [7] and Fois et al [8] we propose that this change is due to the annihilation of defects in the tail states.…”

Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

“…In particular, the formation of thin-film GaAs on glass would permit a new breed of optically interfaced device architectures with the potential to pave the way for all-optical free space device structures. Thin-film GaAs on glass has been formed with various methods, such as sputtering, co-evaporation, flash evaporation, and molecular beam epitaxy (MBE) [1][2][3][4][5][6]. Among these techniques, pulsed-laser deposition (PLD) seems lesser studied although the method is particularly attractive for the deposition of multi-component materials because, though relatively simple to build up, the method maintains the stoichiometry of the ablated material [7].…”

Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs<inf>1&#x2212;x</inf>N<inf>x</inf> thin films

“…a-GaAs thin films are potentially useful for optical switches and interference filters. Therefore, optical properties and band structure of a-GaAs have been studies extensively during the past decades [2,3] . Indeed, the optical and electrical properties of the semiconductor can be modified if other element like carbon, nitrogen, bismuth, etc., was added during preparation.…”