Preparation and characterization of Co epitaxial thin films on Al₂O₃(0001) single-crystal substrates

Towards the nonlinear acousto-magneto-plasmonics

“…We note that considering the lattice symmetry and the lattice parameters, it is possible to grow (111) textured Au layer on either hcp (0001) Co or on fcc (111) Co. A rather large lattice mismatch of about 14% between fcc Au (111) and hcp Co(0001) is relieved by formation of misfit dislocations [106], which assures the emergence of laterally extended grains of (111) textured Au on top of the Co film. Aiming for the sample with large Au (111) grains, the deposition of Co at higher temperatures is usually required [107]. For instance, if Co thin films are deposited on Al 2 O 3 (0001) at temperatures below 150 °C, the fcc (111) textured Co with small Co grains of <50 nm is prepared [107].…”

“…Aiming for the sample with large Au (111) grains, the deposition of Co at higher temperatures is usually required [107]. For instance, if Co thin films are deposited on Al 2 O 3 (0001) at temperatures below 150 °C, the fcc (111) textured Co with small Co grains of <50 nm is prepared [107]. At temperatures of 250 °C and above, clean hcp texture of Co grains is typically realized independent of the deposition technique; see, e.g.…”

Electronic and magnetic properties of TTF and TCNQ covered Co thin films

“…Single crystal sapphire (0001) was used as a substrate because Co will readily grow as an epitaxial fcc (111) film when deposited onto the clean sapphire surface at room temperature. 31,32 The Co was evaporated onto the substrates under ultra-high vacuum (UHV) conditions from an e-beam evaporator. The base pressure of the system varied from 9.0 × 10 −9 to 1.5 × 10 −8 mbar during the experiments.…”

Microstructures of epitaxial Pt films on MgO and &alpha;-Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; single-crystal substrates deposited by magnetron sputtering

“…们 已 经 成 功 制 备 出 Ag [1] , Cu [2] , Au [3] , Ti [4] , Ru [5] , Pt [6~13] , NiAl [14] , NiMnSb [15] 以及Fe/Cu超晶格 [16] 等金 属 外 延 薄 膜 , 不 仅 可 用 作 外 延 薄 膜 制 备 的 种 子 层 (seed layer)或缓冲层(buffer layer), 同时还可兼作器 件电极 . 部分具有磁性的金属外延薄膜(如 , Ni [17] , Fe [18] , Co [19] ), 还广泛应用于杂化铁磁半导体器件研 8] , STO [9,10] , Si [11] , Al 2 O 3 [12] , MgO [12,13] 1 实验…”