Preparation and characterization of CdGeAs2 crystal by modified vertical Bridgman method

Effect of thermal annealing on the optical properties of CdGeAs2 wafers

“…Then the mechanical and temperature oscillation technique [20] has been adopted to synthesize CdGeAs 2 polycrystalline. A crack-free CdGeAs 2 single crystal 15 mm in diameter and 50 mm in length was grown in a three-zone tubular furnace by the modified VB method, i.e.…”

“…The objective of this paper is to improve the quality of the CdGeAs 2 crystal grown with the modified VB method [20]. Various annealing experiments under different conditions have been carried out.…”

Correlation between dislocation etch pits, carrier concentration and optical absorption in CdGeAs 2 grown by modified Vertical Bridgman method

“…Reported values of the mobility ratio b for CdGeAs 2 are about 12 [31,32] and 30 [5]. Using these two values and intrinsic carrier concentration for CdGeAs 2 at 300 K about 2.64×10 13 …”

“…For synthesis, they were loaded into a quartz ampoules which were then sealed under vacuum at about 10 -5 Pa. The ampoule was put into a rotatable tube furnace and heated with the temperature sequence reported in Ref [13]. Then the mechanical and temperature oscillation technique have been adopted to synthesize CdGeAs 2 polycrystalline.…”

“…Recently, with the horizontal gradient freeze method [11,12] and vertical Bridgman method [13,14], single crystals of this ternary chalcopyrite have been grown without severe cracking.…”