Correlation between dislocation etch pits, carrier concentration and optical absorption in CdGeAs 2 grown by modified Vertical Bridgman method

Huang, Wei; Zhao, Beijun; Zhu, Shuang; He, Z. Y.; Chen, Baojun; Zhen, Zhen; Pu, Yudong

doi:10.1016/j.jallcom.2015.06.255

Cited by 7 publications

(2 citation statements)

References 28 publications

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“…Then, the AgGaGe n S 2(n+1) single crystals were grown by a modified Bridgman method. 34,35 Using powder XRD structure refinement, XPS, and Raman spectra, we have analyzed the crystal structure in detail, and characterized the electrical and optical properties of AgGaGe n S 2(n+1) single crystals. Finally, the asgrown crystals have undergone a thermal annealing treatment, so the detrimental absorptions have been eliminated and the band gap widened.…”

Section: Introductionmentioning

confidence: 99%

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe_nS_2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

Huang

Zhu

et al. 2019

Inorg. Chem.

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AgGaGe n S2(n+1) crystal is a series of quaternary nonlinear optical materials for mid-IR laser applications of converting a 1.064 μm pump signal (Nd:YAG laser) to 4–11 μm laser output, but only AgGaGeS4 has attracted the most attention, remaining the other promising AgGaGe n S2(n+1) crystal whose physicochemical properties can be modulated by n value. In this work, AgGaGe n S2(n+1) (n = 2, 3, 4, and 5) polycrystals are synthesized by vapor transport and mechanical oscillation method with different cooling processes. High-resolution X-ray diffraction analysis and refinement have revealed that all the four compounds are crystallized in the noncentrosymmetric orthorhombic space group Fdd2, resulting in the excellent nonlinear optical property, and the distortion of tetrahedron with the variation of n value causes the discrepancy of physicochemical property. Besides, using the modified Bridgman method, AgGaGe n S2(n+1) single crystals with 15 mm diameter and 20–40 mm length have been grown. We have discussed the structure and composition of AgGaGe n S2(n+1) by XPS spectra and analyzed the three kinds of vibration modes of tetrahedral clusters by the Raman spectra. The Hall measurement indicates that the AgGaGe n S2(n+1) single crystals are p-type semiconductor, and the carrier concentration decreases with the increasing n value. All the transmittances of as-grown AgGaGe n S2(n+1) samples exceeds 60% in the transparent range, especially the transmittance of AgGaGe2S6, is up to 70% at 1064 nm, and the band gap of as-grown crystal increases from 2.85 eV for AgGaGe2S6 to 2.92 eV for AgGaGe5S12. After a thermal annealing treatment, the absorptions at 2.9, 4, and 10 μm have been eliminated, and the band gap changed into the range of 2.89–2.96 eV.

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Section: Introductionmentioning

confidence: 99%

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe_nS_2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

Huang

Zhu

et al. 2019

Inorg. Chem.

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“…The CdGeAs 2 crystal is a typical II-IV-V 2 ternary chalcopyrite semiconductor compound, which has a wide transparent range (2.3~18 µm) [1], the highest nonlinear optical coefficient (d 36 = 236 pm/V) [2], a large birefringence (n e − n o ≈ 0.09) [3], and high thermal conductivity (0.04 W/(cm•K)) [4]. Therefore, the CdGeAs 2 crystal can be widely used in the production of frequency-doubling and frequency-mixing infrared parametric oscillators [5].…”

Section: Introductionmentioning

confidence: 99%

The Electronic Structure and Optical Properties of CdGeAs2 Crystal: A DFT and HSE06 Study

et al. 2022

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The electronic structural and optical properties of CdGeAs2 crystals are calculated by using the Perdew–Burke–Ernzerhof (PBE) functional within generalized gradient approximation (GGA) and the Heyd–Scuseria–Ernzerhof (HSE06) functional. The results show that CdGeAs2 is an optical crystal with a direct bandgap of 0.71 eV by using the HSE06 functional method, which is closer to the experimental value. The Mulliken population and differential charge density analysis indicate that the Ge–As and Cd–As bonds have covalent properties, and that the covalent bond of Cd–As is visibly stronger than that of the Ge–As bond. The optical properties show that the CdGeAs2 crystal has strong absorption and reflection in the ultraviolet region and strong transmittance in the infrared region. The average static refractive index of CdGeAs2 is 2.96, and the static birefractive index is 0.08. The results show that CdGeAs2 is an excellent optical material of potential applications in the middle and far infrared.

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The mechanism of pitting initiation and propagation at deformation bands intersection of cold-rolled metastable stainless steel in acidic ferric chloride solution

Zhang

2019

J Mater Sci

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Correlation between dislocation etch pits, carrier concentration and optical absorption in CdGeAs 2 grown by modified Vertical Bridgman method

Cited by 7 publications

References 28 publications

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe_nS_2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe_nS_2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

The Electronic Structure and Optical Properties of CdGeAs2 Crystal: A DFT and HSE06 Study

The mechanism of pitting initiation and propagation at deformation bands intersection of cold-rolled metastable stainless steel in acidic ferric chloride solution

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Correlation between dislocation etch pits, carrier concentration and optical absorption in CdGeAs 2 grown by modified Vertical Bridgman method

Cited by 7 publications

References 28 publications

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGenS2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGenS2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

The Electronic Structure and Optical Properties of CdGeAs2 Crystal: A DFT and HSE06 Study

The mechanism of pitting initiation and propagation at deformation bands intersection of cold-rolled metastable stainless steel in acidic ferric chloride solution

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Product

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Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe_nS_2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications

Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe_nS_2(n+1) (n = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications