Preliminary guidelines and predictions for 14 MeV neutron SEE testing

Weulersse, C.; Guibbaud, N.; Beltrando, Anne-Lise; Galinat, Jeremy; Beltrando, Cyrille; Miller, F.; Trochet, P.; Alexandrescu, Dan

doi:10.1109/tns.2017.2660583

Cited by 11 publications

(5 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Three HEMTs were irradiated at AWE's ASP accelerator [16], [17], where 14 MeV neutrons were generated by deuterium-tritium (DT) fusion: the dominant reaction is 2 1 H + 3 1 H => n + 4 2 He + 17.62 MeV. In this reaction the emitted alpha particle has energy E α = 3.5 MeV, and the neutron has E n = 14.1 MeV.…”

Section: Methodsmentioning

confidence: 99%

“…Aerospace applications demand tolerance of irradiation by neutrons with energies from thermal (25 meV), to hundreds of GeV in the case of neutrons generated by high energy primary cosmic rays [1]. 14 MeV neutron testing is representative of atmospheric Single Event Effects (SEE) environments in integrated and bipolar technologies [2], provided that the Linear Energy Transfer (LET) threshold is below 8 to 9 MeV cm −2 mg −1 [3], [4]. It has been suggested that GaN may be insensitive to single event gate rupture (SEGR) at these LET values [5].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Butler

Uren

Lambert

et al. 2018

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Current transient spectroscopy (CTS), was used to measure the impact of neutron irradiation on output currentlimiting charge traps in AlGaN/GaN HEMTs with time constants from 10 ms to 1800 s. We find that coupling between discrete traps was apparent, in contrast to the commonly employed assumption of independent trap (dis)charging, and increased after 14 MeV neutron irradiation of 2 × 10 13 n/cm 2 and above. Irradiation to a high dose of as much as 7.8 × 10 14 n/cm 2 , which is comparable to eight years exposure to a harsh radiation environment such as the ITER neutral beam injector prototype, increased trapped charge density, and reduced transient drain current to as little as 75% of its equilibrium value. These changes are consistent with displacement damage estimates based on radiation transport calculations.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Butler

Uren

Lambert

et al. 2018

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…The 14 MeV deuterium-tritium neutron generators have gained increasing interest in evaluating the neutron-induced SEE sensitivity of modern ICs, with the advantages of great availability, low cost, and high efficiency (a large number of test boards can be arranged around the neutron target, thanks to the 4π distribution of generated 14 MeV neutrons). However, due to the clear difference between the energy spectrum of atmospheric neutron (meV~GeV) and 14 MeV neutron, the equivalence of 14 MeV neutrons for the evaluation of atmospheric neutron-induced SEE has been a hot topic in the community [5][6][7][8][9]. In 2013, F. Miller et al verified a 14 MeV neutron equivalence model based on the 90 nm SRAM process and found that the error range of the SEE cross-section induced by 14 MeV neutrons was less than two times [5].…”

Section: Introductionmentioning

confidence: 99%

Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM

et al. 2022

View full text Add to dashboard Cite

Single-bit upset (SBU) and multiple-cell upset (MCU) features of high-speed QDR-SRAM are revealed under the 14 MeV neutron irradiation. By comparing with the high-altitude real atmosphere test results directly, the equivalence of 14 MeV neutrons for atmospheric neutron-induced single event effect (SEE) evaluation is investigated. It is found that, compared with the 65 nm planar device, the SBU cross-section of 14 nm FinFET SRAM decreases to 1/58 and the proportion of MCU shows little difference, which results from the narrow channel between fin and substrate caused by shallow channel isolation in 14 nm FinFET process, and the charge sharing effect between fins is weakened. The SBU and MCU cross-sections under the 14 MeV neutron irradiation are underestimated by 22.8% and 85.7%, respectively. Besides, the probability and maximum size of MCU are both smaller than those in the real atmosphere. The MCU shape tends to be vertical, resulting from the smaller vertical spacing of sensitive volumes (about 100 nm). Further Monte-Carlo simulation shows that the total yield of secondary ions produced by atmospheric neutrons is higher than that produced by 14 MeV neutrons. Major Components of the “useful” products are p, Si, α, etc., which are the main cause of SBU events. Besides, compared with 14 MeV neutrons, atmospheric neutrons generate more kinds of secondary ions in the SV within the scope from p to W, and the diverse high-Z elements, such as W, Ta, Hf, etc., are the main cause of MCU events. Moreover, the maximum LET of secondary ions can reach 31.5 MeV·cm2/mg. The equivalence of using 14 MeV neutrons for atmospheric neutron-induced SEE evaluation is closely related to the critical charge of the device under test.

show abstract

“…[6] With the scaling down of the technology node, neutron-induced SEU effects on nanometric SRAMs were studied. [7,8] The simulation approaches based on Monte-Carlo method have been widely developed to analyze the neutroninduced SEU effects. [9][10][11][12][13] However, with the development of semiconductor technology, there is some lack of knowledge about the comparison of the SEU effects from the latest SRAM devices to the former generations.…”

Section: Introductionmentioning

confidence: 99%

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons*

Jin¹,

Chen²,

Li³

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte–Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.

show abstract

Preliminary guidelines and predictions for 14 MeV neutron SEE testing

Cited by 11 publications

References 16 publications

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons*

Contact Info

Product

Resources

About