Preferred growth of epitaxial TiN thin film on silicon substrate by pulsed laser deposition

Oxidation behaviour of TiAlYN/CrN and CrAlYN/CrN nanoscale multilayer coatings with Al2O3topcoat deposited on γ-TiAl alloys

“…Figure 3 shows the XRD pattern of g-TiAl specimens with TiAlYNyCrN coatings in the as-deposited condition and after thermal exposure to air at 750 C for 2011 h. The asdeposited nitride coating exhibited a single phase B1 NaCl structure with a preferential (111) orientation, which was also observed with other magnetron sputtered TiAlNyCrN films, as reported in the literature [23,25,44]. The cubic structure was fitted using a lattice parameter of 0.4184 nm, which is between the lattice constants of CrN (a 0 ¼ 0:414 nm [45]) and TiN (a 0 ¼ 0:424 nm [46]). The TiAlYNyCrN and CrAlYNyCrN nanoscale multilayer coatings: R. Braun et al…”

Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies

“…Table 1 shows that the lattice constant decreases with increasing T s and the values obtained at T s above 400 C are slightly smaller than that of bulk ZrN [19]. Unfortunately, the reason why the lattice constant is smaller than that of bulk ZrN remains unclear, although a similar phenomenon has been reported in epitaxial (1 1 1)TiN films deposited on (1 1 1)Si [20]. However, if we assume on the basis of the lattice constant listed in Table 1 that each two-dimensional superlattice cell of (1 1 1)ZrN and (1 1 1)Si consists of 6 Â 6 unit cells and 5 Â 5 unit cells, respectively, the lattice mismatch between each superlattice cell decreases with increasing T s , from approximately 2.0% at T s ¼ RT to 0.6% at T s ¼ 500 C, because the axis length ðð ffiffi ffi 2 p a=2Þ Â 6Þ of the 6 Â 6 (1 1 1)ZrN unit cells decreases from 1.959 to 1.932 nm, on the 5 Â 5 (1 1 1)Si unit cells with the axis length ðð ffiffi ffi 2 p a=2Þ Â 5Þ of 1.920 nm.…”

Friction coefficient and surface roughness of TiN‐coated HSS deposited using cathodic arc evaporation PVD technique

“…R a and Rms (nm) increase with an increase in deposition temperature in TiN films deposited by filtered cathodic vacuum arc (Cheng and Tay, 2003). Xu et al (1998) found typical surface roughness about 1.5 nm during preferred growth of epitaxial TiN thin film on silicon substrate by pulsed laser deposition. Rms measured by AFM was noted 0.54 nm (scan area; 1 × 1 μ m) by using high‐energy xenon ion beam assisted deposition of TiN film (Wang et al , 1996).…”